Dependence of the Au-SiC(6H) Schottky Barriers Height on the SiC Surface Treatment
We report the effect of surface preparation on the Schottky barrier potential for Au deposited on silicon carbide. Through repeated etchings, a profile of the barrier height as a function of distance into the material has been measured. For bulk substrates and sublimation epitaxial layers there is a significant variation in the barrier height near the surface. The final value of the barrier height was determined to be approximately 2eV, or 2/3 of the energy gap of 6H SiC. We believe that the variation in the previously reported values of barrier height (from 1.4 to 2.6 eV), are due to different SiC surface treatments.
KeywordsBarrier Height Schottky Barrier Epitaxial Film Schottky Barrier Height Etch Depth
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