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Pattern Etching of Crystalline SiC by KrF Excimer Laser

  • K. Shirakawa
  • M. Murahara
Part of the Springer Proceedings in Physics book series (SPPHY, volume 71)

Abstract

SiC exhibits a high resistance to heat and X-rays. With its characteristics, it is expected as a semiconductor material with which IC devices for car and space electronics can be developed. Minute pattern etching of SiC is, however, very difficult chemically or physically. Here, we propose a new photochemical pattern etching method, in which the crystalline SiC surface in an atmosphere of gaseous CIF3 was etched by patterned KrF excimer laser light. The KrF laser beams were irradiated to the SiC substrate: one parallel and the other perpendicular to the substrate surface. The parallel beam was used to dissociate CIF3 gas in the proximity of the substrate, and the perpendicular beam which was projected circuit pattern was used to locally excite the substrate. The line and space of the single crystalline SiC (3C-type) was 1 µm; etching depth, 1000 Å.

Keywords

Laser Fluence Etching Depth Pattern Etching Reticle Pattern Parallel Laser 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • K. Shirakawa
    • 1
  • M. Murahara
    • 2
  1. 1.Hamamatsu Photonics K.K.Hamamatsu-shi, Shizuoka 435Japan
  2. 2.Faculty of EngineeringTokai UniversityHiratsuka-shi, Kanagawa 259-12Japan

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