Abstract
This paper provides a review of the performance advantages of Silicon Carbide based power devices. It is shown here that devices made from either 3C-SiC or 6H-SiC will be significantly superior to silicon based devices. The high breakdown electric field strength in SiC is the major factor that results in a very low specific resistance for the drift region in high voltage devices. This reduces the specific on-resistance for power MOSFETs by a factor of more than 100. It also reduces the forward voltage drop of Schottky rectifiers to less than 2 volts even when designed to support 3000 volts. The development of these SiC devices can, therefore, be expected to result in high switching speed components with low on-state losses for power electronic applications.
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References
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© 1992 Springer-Verlag Berlin Heidelberg
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Baliga, B.J. (1992). Impact of SiC on Power Devices. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_44
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DOI: https://doi.org/10.1007/978-3-642-84804-9_44
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-84806-3
Online ISBN: 978-3-642-84804-9
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