Abstract
Heterojunction structures between non-crystalline materials including amorphous/ microcrystalline phase and crystalline Si substrates are intensively investigated. The correlation of their electrical energy band structure and crystallographical structure is discussed. When µc-Si is deposited directly onto the crystalline Si substrate, crystallization of µc-Si takes place in the vicinity of the interface, so that a Si homojunction is formed. By inserting an a-SiC buffer layer as thin as a few nm, the crystallization or the formation of homojunction is successfully suppressed. As the result, it has been found that an abrupt and a uniform amorphous/crystalline Si heterointerface is obtained. A current gain as high as 523 is achieved by using this multilayered emitter structure.
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© 1992 Springer-Verlag Berlin Heidelberg
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Furukawa, S., Sasaki, K. (1992). HBTs Using a-SiC and µc-Si. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_43
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DOI: https://doi.org/10.1007/978-3-642-84804-9_43
Publisher Name: Springer, Berlin, Heidelberg
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