Skip to main content

Applications for 6H-Silicon Carbide Devices

  • Conference paper
Amorphous and Crystalline Silicon Carbide IV

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 71))

Abstract

A variety of devices with promising characteristics have recently been demonstrated that confirm the potential for 6H-SiC. There are four primary application areas for 6H-SiC devices: 1) optoelectronics, 2) high temperature electronics, 3) radiation hard electronics, and 4) high power/high frequency devices. Optoelectronic devices include blue light emitting diodes and UV photodiodes. High temperature devices cover almost any device in SiC, from pn junctions to FET-based integrated circuitry. Radiation hard and EMP hard 6H-SiC devices can greatly improve the survivability of military systems and enhance nuclear reactor electronics. High power and high frequency devices in 6H-SiC can increase the power density of solid state devices by at least a factor of four over what is currently available and can also increase the operating temperature of these devices.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. C. van Opdorp and J. Vrakking, J. Appl. Phys., 40, 2320 (1969).

    Article  ADS  Google Scholar 

  2. G.A. Slack,J. Phys. Chem. Solids, 34, 321 (1973).

    Article  ADS  Google Scholar 

  3. F.W. Clinard, Jr., and L.W. Hobbs, Radiation Effects in Non-metals, R.A. Johnson and A.N. Orlov, eds., (North Holland Press, 1986 ).

    Google Scholar 

  4. P.C. Canepa, P. Malinaric, R.B. Campbell, and J. Ostroski, IEEE Transactions on Nuclear Science, NS-11, 262 (1964).

    Google Scholar 

  5. W. von Muench and E. Pettenpaul, J. Appl. Phys., 48, 4823 (1977).

    Article  ADS  Google Scholar 

  6. P. Glasow, G. Ziegler, W. Suttrop, G. Pensl and R. Helbeg, SPIE, 868, 40 (1987).

    ADS  Google Scholar 

  7. R.W. Brander and R.P. Sutton, Brit. J. Appl. Phys., 2, 309 (1969).

    Google Scholar 

  8. Cree Research, Inc., Durham, NC (1991).

    Google Scholar 

  9. J.A. Edmond, H.S. Kong, and C.H. Carter, Jr., this volume.

    Google Scholar 

  10. J.W. Palmour, H.S. Kong, D.G. Waltz, J.A. Edmond, and C.H. Carter, Jr., Proc. First Intl. High Temp. Electronics Conf. D.B. King and F.V. Thome, eds., (U.S. Government Printing Office, Albuquerque, NM, 1991 ), p. 511.

    Google Scholar 

  11. G. Keiner, S. Binari, M. Shur and J. Palmour, Electron. Lett., 27, 1038 (1990).

    ADS  Google Scholar 

  12. J. McGarrity, Harry Diamond Laboratories, Adelphi, MD.

    Google Scholar 

  13. R.J. Trew, J.B. Yan, and P.M. Mock, Proceedings of the IEEE, 79, 598 (1991).

    Article  ADS  Google Scholar 

  14. B.J. Baliga, this volume.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 1992 Springer-Verlag Berlin Heidelberg

About this paper

Cite this paper

Palmour, J.W., Edmond, J.A., Kong, HS., Carter, C.H. (1992). Applications for 6H-Silicon Carbide Devices. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_42

Download citation

  • DOI: https://doi.org/10.1007/978-3-642-84804-9_42

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-84806-3

  • Online ISBN: 978-3-642-84804-9

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics