Abstract
A variety of devices with promising characteristics have recently been demonstrated that confirm the potential for 6H-SiC. There are four primary application areas for 6H-SiC devices: 1) optoelectronics, 2) high temperature electronics, 3) radiation hard electronics, and 4) high power/high frequency devices. Optoelectronic devices include blue light emitting diodes and UV photodiodes. High temperature devices cover almost any device in SiC, from pn junctions to FET-based integrated circuitry. Radiation hard and EMP hard 6H-SiC devices can greatly improve the survivability of military systems and enhance nuclear reactor electronics. High power and high frequency devices in 6H-SiC can increase the power density of solid state devices by at least a factor of four over what is currently available and can also increase the operating temperature of these devices.
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© 1992 Springer-Verlag Berlin Heidelberg
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Palmour, J.W., Edmond, J.A., Kong, HS., Carter, C.H. (1992). Applications for 6H-Silicon Carbide Devices. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_42
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DOI: https://doi.org/10.1007/978-3-642-84804-9_42
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