Abstract
Microcrystalline SiC (µc-SiC) thin films have been obtained by using the electron cyclotron resonance (ECR) plasma CVD method. The result from X-ray diffraction measurement shows those films contain crystalline phase SiC without crystalline phase Si. And, the use of Si(CH3)2H2 as a source gas has been found effective for µc-SiC formation by ECR plasma CVD method.
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References
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© 1992 Springer-Verlag Berlin Heidelberg
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Miyajima, T., Sasaki, K., Furukawa, S. (1992). Study of Optimum Condition for Microcrystalline SiC Film Formation by ECR Plasma CVD Method. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_41
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DOI: https://doi.org/10.1007/978-3-642-84804-9_41
Publisher Name: Springer, Berlin, Heidelberg
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