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Study of Optimum Condition for Microcrystalline SiC Film Formation by ECR Plasma CVD Method

  • T. Miyajima
  • K. Sasaki
  • S. Furukawa
Part of the Springer Proceedings in Physics book series (SPPHY, volume 71)

Abstract

Microcrystalline SiC (µc-SiC) thin films have been obtained by using the electron cyclotron resonance (ECR) plasma CVD method. The result from X-ray diffraction measurement shows those films contain crystalline phase SiC without crystalline phase Si. And, the use of Si(CH3)2H2 as a source gas has been found effective for µc-SiC formation by ECR plasma CVD method.

Keywords

Microwave Power Carbon Fraction Electron Cyclotron Resonance Conductive Film Heterojunction Bipolar Transistor 
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References

  1. [1]
    K.Sasaki, M.M.Rahman and S.Furukawa: IEEE ED Lett. EDL-6, pp. 311–312, 1985.ADSCrossRefGoogle Scholar
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    T.Fukanazawa, K.Sasaki and S.Furukawa : Springer Proc. in Phys. 43, pp.49–53, 1989.CrossRefGoogle Scholar
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    K.Sasaki, T.Fukazawa and S.Furukawa: 1987 Intl. Electron Devices Meeting, Tech. Dig. pp. 186–189.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • T. Miyajima
    • 1
    • 2
  • K. Sasaki
    • 1
  • S. Furukawa
    • 1
  1. 1.Department of Applied Electronics, Graduate Schoof of Science and EngineeringTokyo Institute of TechnologyMidori-ku, Yokohama 227Japan
  2. 2.Nippondenso Co., Ltd.Japan

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