Study of Optimum Condition for Microcrystalline SiC Film Formation by ECR Plasma CVD Method
Microcrystalline SiC (µc-SiC) thin films have been obtained by using the electron cyclotron resonance (ECR) plasma CVD method. The result from X-ray diffraction measurement shows those films contain crystalline phase SiC without crystalline phase Si. And, the use of Si(CH3)2H2 as a source gas has been found effective for µc-SiC formation by ECR plasma CVD method.
KeywordsMicrowave Power Carbon Fraction Electron Cyclotron Resonance Conductive Film Heterojunction Bipolar Transistor
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