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Low Temperature Homoepitaxial Growth of 6H-SiC by VPE Method

  • T. Kimoto
  • H. Nishino
  • A. Yamashita
  • W. S. Yoo
  • H. Matsunami
Part of the Springer Proceedings in Physics book series (SPPHY, volume 71)

Abstract

Crystal growth of SiC on off-oriented 6H- SiC{0001} and 6H-SiC{01\(\bar 1\)4} substrates was carried out at low temperatures of 1000–1500°C. Homoepitaxial growth of 6H-SiC is achieved at a temperature as low as 1200°C governed by step-flowgrowth on off-oriented {0001} faces and at 1100°C on (0\(\bar 1\)1\(\bar 4\))C faces. The activation energy of growth rate shows a very small value of 3.0kcal/mole. This can be quantitatively analyzed on the basis of a stagnant layer model in which crystal growth is controlled by diffusion of reactants in a stagnant layer.

Keywords

Atomic Step Grown Layer Hexagonal Unit Cell RHEED Pattern Stagnant Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • T. Kimoto
    • 1
  • H. Nishino
    • 1
  • A. Yamashita
    • 1
  • W. S. Yoo
    • 1
  • H. Matsunami
    • 1
  1. 1.Department of Electrical EngineeringKyoto UniversitySakyo, Kyoto 606-01Japan

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