Abstract
Crystal growth of SiC on off-oriented 6H- SiC{0001} and 6H-SiC{01\(\bar 1\)4} substrates was carried out at low temperatures of 1000–1500°C. Homoepitaxial growth of 6H-SiC is achieved at a temperature as low as 1200°C governed by step-flowgrowth on off-oriented {0001} faces and at 1100°C on (0\(\bar 1\)1\(\bar 4\))C faces. The activation energy of growth rate shows a very small value of 3.0kcal/mole. This can be quantitatively analyzed on the basis of a stagnant layer model in which crystal growth is controlled by diffusion of reactants in a stagnant layer.
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Kimoto, T., Nishino, H., Yamashita, A., Yoo, W.S., Matsunami, H. (1992). Low Temperature Homoepitaxial Growth of 6H-SiC by VPE Method. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_4
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DOI: https://doi.org/10.1007/978-3-642-84804-9_4
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