Low Temperature Homoepitaxial Growth of 6H-SiC by VPE Method

  • T. Kimoto
  • H. Nishino
  • A. Yamashita
  • W. S. Yoo
  • H. Matsunami
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 71)

Abstract

Crystal growth of SiC on off-oriented 6H- SiC{0001} and 6H-SiC{01\(\bar 1\)4} substrates was carried out at low temperatures of 1000–1500°C. Homoepitaxial growth of 6H-SiC is achieved at a temperature as low as 1200°C governed by step-flowgrowth on off-oriented {0001} faces and at 1100°C on (0\(\bar 1\)1\(\bar 4\))C faces. The activation energy of growth rate shows a very small value of 3.0kcal/mole. This can be quantitatively analyzed on the basis of a stagnant layer model in which crystal growth is controlled by diffusion of reactants in a stagnant layer.

Keywords

Migration CarbIde Hexagonal Supersaturation 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    N. Kuroda, K. Shibahara, W. S. Yoo, S. Nishino and H. Matsunami; Extended Abstracts of the 19th Conf. on Solid State Devices and Materials, Tokyo(1987), p227.Google Scholar
  2. [2]
    K. Shibahara, N. Kuroda, S. Nishino and H. Matsunami; Jpn. J. Appl. Phys., 26 (1987), L1815.CrossRefADSGoogle Scholar
  3. [3]
    T. Ueda, H. Nishino and H. Matsunami; J. Cryst. Growth, 104 (1990), 695.CrossRefADSGoogle Scholar
  4. [4]
    H. Matsunami, T. Ueda and H. Nishino; Mat. Res. Soc. Symp. Proc., vol. 162 (1990), 397.CrossRefGoogle Scholar
  5. [5]
    H. S. Kong, J. T. Glass and R. F. Davis; J. Appl. Phys., 64 (1988), 2672.Google Scholar
  6. [6]
    J. A. Powell, D. J. Larkin, L. G. Matus, W. J. Choyke, J. L. Bradshaw, L. Henderson, M. Yoganathan, J. Yang and P. Pirouz; Appl. Phys. Lett., 56 (1990), 1442.Google Scholar
  7. [7]
    T. Tachibana, H. S.Kong, Y. C.Wang and R. F.Davis; J. Appl. Phys., 67 (1990), 6375.CrossRefADSGoogle Scholar
  8. [8]
    Y. C.Wang, R. F.Davis and J. A. Edmond; J. Electron. Mat., 20 (1991), 289.CrossRefADSGoogle Scholar
  9. [9]
    W. S.Yoo, S. Nishino and H. Matsunami; J. Cryst. Growth, 99 (1990), 278.CrossRefADSGoogle Scholar
  10. [10]
    W. S.Yoo, A. Yamashita, T. Kimoto and H. Matsunami; J. Cryst. Growth, (1991), in press.Google Scholar
  11. [11]
    W. S.Yoo and H. Matsunami; J. Appl. Phys., in press.Google Scholar
  12. [12]
    A. Yamashita, W. S.Yoo, T. Kimoto and H. Matsunami; to be submitted.Google Scholar
  13. [13]
    B. Wessels, H. C. Gatos and A. F. Witt; Silicon Carbide 1973, edited by R. C. Marshall, J. W. Faust,Jr. and C. E. Ryen(University of South Carolina Press, 1974 ), p25.Google Scholar
  14. [14]
    V. J. Jennings, A. Sommer and H. C. Chang; J. Electro- chem. Soc., 113 (1966), 728.CrossRefGoogle Scholar
  15. [15]
    W. v. Muench and I. Pfaffeneder; Thin Solid Films, 31 (1976), 39.CrossRefADSGoogle Scholar
  16. [16]
    S. Nishino, H. Matsunami and T. Tanaka; J. Cryst. Growth, 45 (1978), 144.CrossRefADSGoogle Scholar
  17. [17]
    F. C. Eversteyn, P. J. W.Severin, C. H. J. v. d. Brekel and H. L. Peek; J. Electrochem. Soc., 117 (1970), 925.Google Scholar
  18. [18]
    T. Kimoto, H. Nishino, T. Ueda, A. Yamashita, W. S. Yoo and H. Matsunami; to be submitted.Google Scholar
  19. [19]
    Handbook of Chemistry and Physics, edited by R.C.Weast(CRC Press, 1975).Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • T. Kimoto
    • 1
  • H. Nishino
    • 1
  • A. Yamashita
    • 1
  • W. S. Yoo
    • 1
  • H. Matsunami
    • 1
  1. 1.Department of Electrical EngineeringKyoto UniversitySakyo, Kyoto 606-01Japan

Personalised recommendations