Abstract
The deposition of SixC1-x alloys on silicon using a low-cost, hot-wall, horizontal low pressure chemical vapor deposition (LPCVD) batch reactor, is investigated. Silane is used as the source for silicon atoms while two non-toxic and nonflammable carbon sources are studied for the carbon source, namely carbon tetrafluoride and 1,1,1-trichloroethane. Films with less than 2% carbon are obtained when carbon tetrafluoride is used at temperatures of 900°C or below. When 1,1,1-trichloroethane is used, SiC alloys with controlled carbon content greater than 15% are successfully deposited even at temperatures as low as 650°C.
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© 1992 Springer-Verlag Berlin Heidelberg
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Hébert, F. (1992). Siχ-C1-χ Alloys Deposited on Silicon Using a Low-Cost, Hot-Wall, LPCVD Reactor. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_39
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DOI: https://doi.org/10.1007/978-3-642-84804-9_39
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