Polycrystalline SiC Films Prepared by a Plasma Assisted Method at Temperatures Lower than 1000°C

  • K. Kamimura
  • K. Koike
  • H. Ono
  • T. Homma
  • Y. Onuma
  • S. Yonekubo
Part of the Springer Proceedings in Physics book series (SPPHY, volume 71)

Abstract

Polycrystalline SiC films have been prepared by plasma assisted decomposition of tetramethylsilane (TMS) at temperatures lower than 1100 °C.

Keywords

Quartz Furnace Carbide Silane Hydrocarbon 

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References

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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • K. Kamimura
    • 1
  • K. Koike
    • 1
  • H. Ono
    • 1
  • T. Homma
    • 1
  • Y. Onuma
    • 1
  • S. Yonekubo
    • 2
  1. 1.Department of Electrical and Electronic EngineeringShinshu UniversityNagano 380Japan
  2. 2.Nagano Precision Industry Research InstituteNagano 394Japan

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