Abstract
By FTIR transmission spectroscopy of 6H-SiC samples sharp absorption lines in the spectral region of 1300 – 1400 nm have been reported. But in transmission measurements with monochromatic light only in 6H-SiC these lines could not be observed. The optical generation of the corresponding absorption centers can be done by additional monochomatic light focussed on the sample. The excitation spectra for different absorption lines were measured. The cut-off wavelength in the excitation spectra gives the ground state energy of 1.45 eV of the created center relative to the valence band. Comparision with EPR measurements shows that the corresponding absorption center is V4+. Additionally the transient behaviour of the transmission was investigated for different excitation intensities in the temperature range from 15 – 80 K.
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© 1992 Springer-Verlag Berlin Heidelberg
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Stiasny, T., Helbig, R., Stein, R.A. (1992). Optically Induced Near-IR Absorption Lines in 6H-SiC. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_31
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DOI: https://doi.org/10.1007/978-3-642-84804-9_31
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