Determination of Stacking-Fault Abundances and Distributions in SiC Using XRPD and HRTEM

  • P. J. Schields
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 71)


Relative abundances of stacking faults in β-SiC were determined from high-resolution transmission electron microscopy (HRTEM) structure images. These stacking-fault abundances were correlated to the intensity of the {10} two- dimensional line in the x-ray powder diffraction (XRPD) pattern. The {10} line corresponds to rods of reciprocal-lattice intensity generated by the disorder of the faulted structure. Relative abundances of stacking faults are defined by the relative peak intensity of the {10} line. Systematic changes of XRPD relative line intensities for β-SiC are consistent with theoretical predictions based on the local hexagonal symmetry of the faulted crystal structure.

Distributions of interfault distances in heavily faulted regions of β-SiC were determined from HRTEM images. These distributions are consistent with a single, random, fault probability greater than 0.5 (relative to β-SiC). Conventional XRPD fault probability determinations can not be applied since line broadening, asymmetry and displacements are ambiguous to measure and interpret. The proposed XRPD stacking-fault analysis was used to interpret the transformation of β-SiC as a function of time and temperature in a carbon-rich atmosphere.


Electron Microscopy Transmission Electron Microscopy Relative Abundance Theoretical Prediction Silicon Carbide 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • P. J. Schields
    • 1
  1. 1.Department of ChemistryArizona State UniversityTempeUSA

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