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Determination of Stacking-Fault Abundances and Distributions in SiC Using XRPD and HRTEM

  • P. J. Schields
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 71)

Abstract

Relative abundances of stacking faults in β-SiC were determined from high-resolution transmission electron microscopy (HRTEM) structure images. These stacking-fault abundances were correlated to the intensity of the {10} two- dimensional line in the x-ray powder diffraction (XRPD) pattern. The {10} line corresponds to rods of reciprocal-lattice intensity generated by the disorder of the faulted structure. Relative abundances of stacking faults are defined by the relative peak intensity of the {10} line. Systematic changes of XRPD relative line intensities for β-SiC are consistent with theoretical predictions based on the local hexagonal symmetry of the faulted crystal structure.

Distributions of interfault distances in heavily faulted regions of β-SiC were determined from HRTEM images. These distributions are consistent with a single, random, fault probability greater than 0.5 (relative to β-SiC). Conventional XRPD fault probability determinations can not be applied since line broadening, asymmetry and displacements are ambiguous to measure and interpret. The proposed XRPD stacking-fault analysis was used to interpret the transformation of β-SiC as a function of time and temperature in a carbon-rich atmosphere.

Keywords

Electron Microscopy Transmission Electron Microscopy Relative Abundance Theoretical Prediction Silicon Carbide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • P. J. Schields
    • 1
  1. 1.Department of ChemistryArizona State UniversityTempeUSA

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