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Thermal Oxidation of Single-Crystal Silicon Carbide: Kinetic, Electrical, and Chemical Studies

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Book cover Amorphous and Crystalline Silicon Carbide IV

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 71))

Abstract

This paper presents kinetic data from oxidation studies of the polar faces for 3C and 6H Sic in wet and dry oxidizing ambients. Values for the linear and parabolic rate constants were obtained, as well as preliminary results for the activation energies of the rate constants. Examples are presented describing how thermal oxidation can be used to map polytypes and characterize defects in epitaxial layers grown on low tilt angle 6H Sic substrates. Interface widths were measured using Auger electron spectroscopy (AES) with Ar ion beam depth profiling and variable angle spectroscopic ellipsometry (VASE) with effective medium approximation (EMA) models. Preliminary electrical measurements of MOS capacitors are also presented.

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Author information

Authors and Affiliations

  1. Sverdrup Technology, Inc., MS 77-1, 2001 Aerospace Parkway, Brook Park, OH, 44142, USA

    J. B. Petit

  2. Ohio Aerospace Institute, MS 77-1, 2001 Aerospace Parkway, Brook Park, OH, 44142, USA

    P. G. Neudeck

  3. NASA-Lewis Research Center, MS 77-1, 21000 Brookpark Rd., Cleveland, OH, 44135, USA

    L. G. Matus & J. A. Powell

Authors
  1. J. B. Petit
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  2. P. G. Neudeck
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  3. L. G. Matus
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  4. J. A. Powell
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Editor information

Editors and Affiliations

  1. Microelectronics Laboratory, Santa Clara University, 95053, Santa Clara, CA, USA

    Cary Y. Yang  & M. Mahmudur Rahman  & 

  2. School of Engineering, Howard University, 20059, Washington, DC, USA

    Gary L. Harris

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© 1992 Springer-Verlag Berlin Heidelberg

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Petit, J.B., Neudeck, P.G., Matus, L.G., Powell, J.A. (1992). Thermal Oxidation of Single-Crystal Silicon Carbide: Kinetic, Electrical, and Chemical Studies. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_27

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  • DOI: https://doi.org/10.1007/978-3-642-84804-9_27

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-84806-3

  • Online ISBN: 978-3-642-84804-9

  • eBook Packages: Springer Book Archive

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