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Metallization Studies on Epitaxial 6H-SiC

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Amorphous and Crystalline Silicon Carbide IV

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 71))

Abstract

A study of electrical and physical data for metals deposited on n and p—type epitaxial 6H—SiC is reported. The metals investigated were Ni, NiCr, W, TiW, and Al. Electrical characterization included IV and CV data for Schottky contacts and specific contact resistance for ohmic contacts. The surface preparation prior to metallization was found to be critical to the quality of the contacts formed. The near surface region of the metal—semiconductor interface was investigated using Rutherford Backscattering (RBS) and light ion channeling (LIC) to detect interdiffusion and lattice damage. The ion scattering experiments were complimented with Auger Electron Spectroscopy (AES) and X—ray Photoelectron Spectroscopy (XPS) measurements. Surface morphology was investigated using SEM analysis including Energy Dispersive X—ray (EDX) analysis.

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References

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Author information

Authors and Affiliations

  1. Department of Physics, Auburn University, Auburn, AL, 36849, USA

    J. Crofton, J. M. Ferrero, P. A. Barnes, J. R. Williams, M. J. Bozack & C. C. Tin

  2. Department of Electrical Engineering, Auburn University, Auburn, AL, 36849, USA

    C. D. Ellis

  3. Westinghouse Science and Technology Center, Pittsburg, PA, 15235, USA

    J. A. Spitznagel & P. G. McMullin

Authors
  1. J. Crofton
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  2. J. M. Ferrero
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  3. P. A. Barnes
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  4. J. R. Williams
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  5. M. J. Bozack
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  6. C. C. Tin
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  7. C. D. Ellis
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  8. J. A. Spitznagel
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  9. P. G. McMullin
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Editor information

Editors and Affiliations

  1. Microelectronics Laboratory, Santa Clara University, 95053, Santa Clara, CA, USA

    Cary Y. Yang  & M. Mahmudur Rahman  & 

  2. School of Engineering, Howard University, 20059, Washington, DC, USA

    Gary L. Harris

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© 1992 Springer-Verlag Berlin Heidelberg

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Crofton, J. et al. (1992). Metallization Studies on Epitaxial 6H-SiC. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_25

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  • DOI: https://doi.org/10.1007/978-3-642-84804-9_25

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-84806-3

  • Online ISBN: 978-3-642-84804-9

  • eBook Packages: Springer Book Archive

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