Abstract
A hybrid pseudo-potential and tight-binding band model is used to extrapolate from β-SiC to the α-polytypes. Preliminary band structures, including band gaps, locations of the conduction band minimum Ec, and effective masses at Ec, have been calculated. Due to uncertainties in the extrapolation of pseudopotentials, these results have to be further analyzed. However, because of its computational efficiency and simplicity in interpretation, this hybrid method can effectively interact with experiments to provide a comprehensive study of band structures of SiC.
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Srichaikul, P., Chen, AB., Choyke, W.J. (1992). Electronic Band Structures of SiC Calculated from a Hybrid Pseudopotential and Tight-Binding Model. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_24
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DOI: https://doi.org/10.1007/978-3-642-84804-9_24
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