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EPR in the 2-mm Range and Optical Absorption of the Native Defect in 4H-SiC Epilayers

  • E. N. Kalabukhova
  • S. N. Lukin
  • B. D. Shanina
  • Yu. A. Vodakov
  • A. A. Lepneva
  • E. N. Mokhov
Part of the Springer Proceedings in Physics book series (SPPHY, volume 71)

Abstract

EPR spectra at frequency v = 140 GHz and optical absorption spectra are studied for 4HSiC epilayers produced by means of vacuum sublimation “sandwich” method with nitrogen concentrations from 1016 to 1018cm−3.

A new paramagnetic center ND-1 is discovered in the 4HSiC epilayers, which have deviations from the stoichiometry towards Si excess. Dynamics of the EPR spectrum of 4HSiC epilayers are studied in the temperature interval from T = 4.2K to 34K. Comparing theoretical to experimental data, the binding energy for the paramagnetic carrier captured by the ND-1 center is found to be E = 12.8 MeV.

A model of the ND-1 center is proposed, which interprets it as an antisite defect Si c i.e., a silicon atom in the hexagonal position of a carbon site with captured electron.

Keywords

Nitrogen Concentration Optical Absorption Spectrum Defect Center Native Defect Antisite Defect 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • E. N. Kalabukhova
    • 1
  • S. N. Lukin
    • 1
  • B. D. Shanina
    • 1
  • Yu. A. Vodakov
    • 2
  • A. A. Lepneva
    • 2
  • E. N. Mokhov
    • 2
  1. 1.Institute of SemiconductorsUkrainian Academy of SciencesKiev 28Ukraine
  2. 2.A.F. Ioffe Physical-Technical InstituteRussian Academy of SciencesSt. PetersburgRussia

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