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Nitrogen Impurities in 3C-SiC Epilayers

  • I. Nashiyama
  • S. Misawa
  • H. Okumura
  • S. Yoshida
  • Y. Hirabayashi
Part of the Springer Proceedings in Physics book series (SPPHY, volume 71)

Abstract

Undoped 3C-SiC epilayers with residual carrier densities as low as 1×1015 cm−3 were obtained by chemical vapor deposition using pure SiH4 and C3H8 source gasses instead of diluted source gasses. Hall-effect, ESR, and SIMS measurements were carried out for these 3C-SiC epilayers. The epilayers having carrier densities below l×l015cm-3 showed no significant 3-line ESR signal associated with nitrogen impurities. The reduction in residual carrier density is explained in terms of the nitrogen impurity concentration in 3C-SiC epilayers. Lattice site location of nitrogen atoms in 3C-SiC was determined by the 15N(p,α0)12C nuclear reaction analysis combined with channeling.

Keywords

Electron Spin Resonance Spin Density Carrier Density Electron Spin Resonance Signal Intensity Nitrogen Impurity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    M. Shinohara, M. Yamanaka, H. Daimon, E. Sakuma, H. Okumura, S. Misawa, K. Endo, and S. Yoshida: Jpn. J. Appl. Phys. 27(1988)L434.CrossRefADSGoogle Scholar
  2. 2.
    A. Suzuki, A. Umemoto, M. Shireta, K. Furukawa, and S. Nakajima: Appl. Phys. Lett. 49 (1986)450.CrossRefADSGoogle Scholar
  3. 3.
    B. Segall, S. A. Alterovits, E. J. Haugland, and L. G. Matus: Appl.Phys.Lett. 49(1986)584.Google Scholar
  4. 4.
    B. Segali, S. A. Alterovits, E. J. Haugland, and L. G. Matus: Appl.Phys.Lett. 50 (1987) 1533.Google Scholar
  5. 5.
    J. A. Freitas Jr.,S. G. Bishop, P. E. R. Nordquist, Jr., and M. L. Gipe: Appl. Phys. Lett. 52 (1988) 1695.CrossRefADSGoogle Scholar
  6. 6.
    I. Nashiyama, H. Okumura, E. Sakuma, S. Misawa, K. Endo, and S. Yoshida: in 3rd. Int. Conf. on Amorphous and Crystalline Silicon Carbide and other Group IV-IV Materials, (Washington, D.C., April, 1990). (to be published)Google Scholar
  7. 7.
    H. Okumura, M. Shinohara, S. Kuroda, K. Endo, E. Sakuma, S. Misawa, and S. Yoshida Jpn. J. Appl. Phys. 27 (1988) 1712.CrossRefADSGoogle Scholar
  8. 8.
    D. J. Lepine: Phys. Rev. B2 (1970) 2429.CrossRefADSGoogle Scholar
  9. 9.
    G. Feher, R. C. Fletcher, and E. A. Gere: Phys. Rev. 100 (1955) 1784.CrossRefADSGoogle Scholar
  10. 10.
    S. Yoshida, K. Sasaki, E. Sakuma, S. Misawa, and S. Gonda: Appl. Phys. Lett. 46(1985)766.CrossRefADSGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • I. Nashiyama
    • 1
  • S. Misawa
    • 1
  • H. Okumura
    • 1
  • S. Yoshida
    • 1
  • Y. Hirabayashi
    • 2
  1. 1.Electrotechnical LaboratoryTsukuba, Ibaraki 305Japan
  2. 2.Industrial Research Institute of Kanagawa PrefectureKanazawa-ku, Yokohama 236Japan

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