Abstract
Undoped 3C-SiC epilayers with residual carrier densities as low as 1×1015 cm−3 were obtained by chemical vapor deposition using pure SiH4 and C3H8 source gasses instead of diluted source gasses. Hall-effect, ESR, and SIMS measurements were carried out for these 3C-SiC epilayers. The epilayers having carrier densities below l×l015cm-3 showed no significant 3-line ESR signal associated with nitrogen impurities. The reduction in residual carrier density is explained in terms of the nitrogen impurity concentration in 3C-SiC epilayers. Lattice site location of nitrogen atoms in 3C-SiC was determined by the 15N(p,α0)12C nuclear reaction analysis combined with channeling.
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© 1992 Springer-Verlag Berlin Heidelberg
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Nashiyama, I., Misawa, S., Okumura, H., Yoshida, S., Hirabayashi, Y. (1992). Nitrogen Impurities in 3C-SiC Epilayers. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_18
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DOI: https://doi.org/10.1007/978-3-642-84804-9_18
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