Abstract
We have observed a closely spaced series of very sharp and shallow lines in the low temperature photoluminescence spectrum of lightly doped p- type epitaxial single crystal films of 3C and 6H SiC from a variety of sources. We use a model based on group theory to argue that the origin of these lines is the recombination of an exciton in an acceptor four particle complex.
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Clemen, L.L., Choyke, W.J., Devaty, R.P., Powell, J.A., Kong, HS. (1992). Comparison of Dilutely Doped p-Type 6H-SiC from a Variety of Sources. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_14
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DOI: https://doi.org/10.1007/978-3-642-84804-9_14
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