Liquid Phase Epitaxy of SiC-AlN Solid Solutions

Abstract

In this paper we described (SiC)_1−x(AlN)_x layers and pn structures grown by container free liquid phase epitaxy. Auger measurements have indicated that the concentration of the AlN component in the epitaxial layers range from 2 to 10 percent, depending on the growth conditions. Element’s distribution across the layer was uniform. X-ray difraction data indicated that layers are monocrystalline. Intense cathodoluminescence from the layers was recorded at 85 K. The short-wave wing of the luminescence spectrum extending up to 3.6 eV in energy. It was found that the conductivity type of solid solution depends on growth conditions. Using this dependence, we fabricated (SiC)_l−x(AlN)_x solid solution pn junction, for the first time. Also hetero pn junction between n-type 6H-SiC substrate and p type solid solution has been made. Both pn junctions have effective electroluminescence at room temperature.