Abstract
Observations regarding a number of defects in 6H-SiC single crystals grown by the sublimation method and the dependence of these defects on source materials and pressure are reported in this paper. A SiC source with unintentional impurities resulted in the creation of a number of striated defects during the initial stage of crystal growth. Three kinds of etch pits (EP-1, EP-2 and EP-3) were observed. The incidence of small-size EP-3 etch pits was found to be effectively reduced by increasing the processing pressure. 6H-SiC single crystals with a lower defect density were fabricated using pure source material at 2300°C: Etch pit densities were <x103, 5.2×103 and 2.2×104 cm−2 for EP-1, EP-2 and EP-3, respectively.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Yu. M. Tairov and V. F. Tsvetkov: J. Cryst. Growth 52 (1981) 146.
G. Ziegler, P. Lanig, D. Theis and C. Weyrich: IEEE Trans. Electron Devices, ED-30 (1983) 277.
K. Koga, T. Nakata and T. Niina: Extended Abstr. 17th Conf. Solid State Devices and Materials (Tokyo 1985 ) 249.
D. L. Barrett, R. G. Seidensticker, W. Gaida, R. H. Hopkins and W. J. Choyke: J. Cryst. Growth 109 (1991) 17.
L. Hoffmann, G. Ziegler, D. Theis and C. Weyrich: J. Appl. Phys. 53 (1982) 6962.
H. S. Kong, J. T. Glass and R. F. Davis: J. Appl. Phys. 64 (5) (1988) 2672.
L. A. Tang, J. A. Edmond, J. W. Palmour and C. H. Carter, Jr.: in Extended Abstracts of the 1989 Fall meeting of the Electrochemical Society (1989) 705.
Y. Matsushita, T. Nakata, Y. Ueda, T. Uetani, Y. Fujikawa, K. Koga and T. Niina: Proc. Japan Display ’89 (Kyoto, 1989 ) 696.
Y. Matsushita, T. Nakata, T. Uetani, T. Yamaguchi and T. Niina: Jpn. J. Appl. Phys. 29 (1990) L343.
K. Koga, T. Nakata, Y. Ueda, Y. Matsushita and Y. Fujikawa: in Extended Abstracts of the 1989 Fall Meeting of the Electrochemical Society (1989) 689.
M. J. Jennings, In Silicon Carbide 1968, H. K. Henisch and R. Roy: Eds., New York, Pergamon Press (1969) S199.
J. W. Faust, Jr.: in Silicon Carbide, J. R. O’Connor and J.Smiltens, Eds. London, Pergamon Press (1960) 403.
S. Amelinckx and G. Strumane: in Silicon Carbide, J. R. O’Connor and J. Smiltens, Eds., London, Pergamon Press (1960) 162.
T. Nakata, K. Koga, Y. Matsushita, Y. Ueda and T. Niina: in Amorphous and Crystalline Silicon Carbide II, M. M. Rahman, C. Y. W. Yang and G. L. Harris, Eds., Springer-Verlag (1989) 20.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1992 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Koga, K., Fujikawa, Y., Ueda, Y., Yamaguchi, T. (1992). Growth and Characterization of 6H-SiC Bulk Crystals by the Sublimation Method. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_12
Download citation
DOI: https://doi.org/10.1007/978-3-642-84804-9_12
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-84806-3
Online ISBN: 978-3-642-84804-9
eBook Packages: Springer Book Archive