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Amorphous and Crystalline Silicon Carbide IV pp 84–89Cite as

Growth and Characterization of β-SiC Films Grown on Si by Gas-Source Molecular Beam Epitaxy

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Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 71))

Abstract

Films of β-SiC have been grown on 4° off-axis Si (100) substrates from 1198 to 1398 K by gas-source MBE using Si2H6 and C2H4. Monocrystalline films were obtained at temperatures as low as 1248 K, as confirmed by electron diffraction. The latter films were specularly reflective. However, SEM revealed growth pits extending to the SiC surface as well as preferential growth on the pit edges. Cross-sectional TEM analysis confirmed the epitaxial relationship between the film and the Si substrate. Misfit dislocations and microtwins were also observed.

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Author information

Authors and Affiliations

  1. Department of Materials Science and Engineering, North Carolina State University, P.O. Box 7907, Raleigh, NC, 27695-7907, USA

    L. B. Rowland, S. Tanaka, R. S. Kern & R. F. Davis

Authors
  1. L. B. Rowland
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  2. S. Tanaka
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  3. R. S. Kern
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  4. R. F. Davis
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Editor information

Editors and Affiliations

  1. Microelectronics Laboratory, Santa Clara University, 95053, Santa Clara, CA, USA

    Cary Y. Yang  & M. Mahmudur Rahman  & 

  2. School of Engineering, Howard University, 20059, Washington, DC, USA

    Gary L. Harris

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© 1992 Springer-Verlag Berlin Heidelberg

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Cite this paper

Rowland, L.B., Tanaka, S., Kern, R.S., Davis, R.F. (1992). Growth and Characterization of β-SiC Films Grown on Si by Gas-Source Molecular Beam Epitaxy. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_10

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  • DOI: https://doi.org/10.1007/978-3-642-84804-9_10

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-84806-3

  • Online ISBN: 978-3-642-84804-9

  • eBook Packages: Springer Book Archive

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