Growth and Characterization of β-SiC Films Grown on Si by Gas-Source Molecular Beam Epitaxy
Films of β-SiC have been grown on 4° off-axis Si (100) substrates from 1198 to 1398 K by gas-source MBE using Si2H6 and C2H4. Monocrystalline films were obtained at temperatures as low as 1248 K, as confirmed by electron diffraction. The latter films were specularly reflective. However, SEM revealed growth pits extending to the SiC surface as well as preferential growth on the pit edges. Cross-sectional TEM analysis confirmed the epitaxial relationship between the film and the Si substrate. Misfit dislocations and microtwins were also observed.
KeywordsMisfit Dislocation RHEED Pattern Epitaxial Relationship Auger Depth Profile Molecular Beam Epitaxy Apparatus
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- 11.L. B. Rowland etal., to be published.Google Scholar