Recent Progress in Epitaxial Growth of SiC
Recent progress in epitaxial growth of SiC in the author’s group is surveyed. Growth of 3C-SiC on a Si substrate, a typical success in heteroepitaxial growth with large lattice mismatch, is briefly reviewed. Step-controlled epitaxy of α-SiC, which the author’s group named and is a key technology for future development, is discussed in detail. Growth mechanism and effects of off-direction and off-angle are described. As an advanced epitaxial growth, atomic level control in SiC crystal growth by gas source MBE is given.
KeywordsEpitaxial Growth Grown Layer Large Lattice Mismatch RHEED Pattern Heteroepitaxial Growth
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