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Recent Progress in Epitaxial Growth of SiC

  • H. Matsunami
Part of the Springer Proceedings in Physics book series (SPPHY, volume 71)

Abstract

Recent progress in epitaxial growth of SiC in the author’s group is surveyed. Growth of 3C-SiC on a Si substrate, a typical success in heteroepitaxial growth with large lattice mismatch, is briefly reviewed. Step-controlled epitaxy of α-SiC, which the author’s group named and is a key technology for future development, is discussed in detail. Growth mechanism and effects of off-direction and off-angle are described. As an advanced epitaxial growth, atomic level control in SiC crystal growth by gas source MBE is given.

Keywords

Epitaxial Growth Grown Layer Large Lattice Mismatch RHEED Pattern Heteroepitaxial Growth 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • H. Matsunami
    • 1
  1. 1.Department of Electrical EngineeringKyoto UniversitySakyo, Kyoto 606Japan

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