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Diffusion of Hydrogen in Semiconductors

  • Stephen J. Pearton
  • James W. Corbett
  • Michael Stavola
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 16)

Abstract

The diffusion of hydrogen in semiconductors is rather complex because of the fact that atomic hydrogen can exist in several charge states (notably H+ in p-type material and H or H0 in n-type material) and also that hydrogen can apparently be present in a number of different forms, namely atomic, molecular or bound to a defect or impurity. Since the probability of formation of these different forms is dependent on the defect or impurity concentration in the material and on the hydrogen concentration itself, then the apparent hydrogen diffusivity is a function of the sample conductivity and type, and the method of hydrogen insertion. For example, hydrogen appears to diffuse more rapidly under conditions of low hydrogen concentration such as acid etching or boiling in water, than it does under conditions of high hydrogen concentration. The most obvious example of the latter is during exposure to a hydrogen plasma.

Keywords

Hydrogen Concentration Hydrogen Diffusion Plasma Exposure Diffusion Profile Hydrogen Permeation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • Stephen J. Pearton
    • 1
  • James W. Corbett
    • 2
  • Michael Stavola
    • 3
  1. 1.AT&T Bell LaboratoriesMurray HillUSA
  2. 2.Physics DepartmentState University of New York at AlbanyAlbanyUSA
  3. 3.Physics DepartmentLehigh UniversityBethlehemUSA

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