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Diffusion of Hydrogen in Semiconductors

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Hydrogen in Crystalline Semiconductors

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 16))

Abstract

The diffusion of hydrogen in semiconductors is rather complex because of the fact that atomic hydrogen can exist in several charge states (notably H+ in p-type material and H− or H0 in n-type material) and also that hydrogen can apparently be present in a number of different forms, namely atomic, molecular or bound to a defect or impurity. Since the probability of formation of these different forms is dependent on the defect or impurity concentration in the material and on the hydrogen concentration itself, then the apparent hydrogen diffusivity is a function of the sample conductivity and type, and the method of hydrogen insertion. For example, hydrogen appears to diffuse more rapidly under conditions of low hydrogen concentration such as acid etching or boiling in water, than it does under conditions of high hydrogen concentration. The most obvious example of the latter is during exposure to a hydrogen plasma.

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Authors and Affiliations

  1. AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ, 07974, USA

    Stephen J. Pearton Ph. D.

  2. Physics Department, State University of New York at Albany, 1400 Washington Avenue, Albany, NY, 12222, USA

    James W. Corbett Ph. D. (Distinguished Service Professor)

  3. Physics Department, Lehigh University, Bethlehem, PA, 18015, USA

    Professor Michael Stavola Ph. D.

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  1. Stephen J. Pearton Ph. D.
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Pearton, S.J., Corbett, J.W., Stavola, M. (1992). Diffusion of Hydrogen in Semiconductors. In: Hydrogen in Crystalline Semiconductors. Springer Series in Materials Science, vol 16. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84778-3_9

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