Hydrogen-Related Defects in Semiconductors

  • Stephen J. Pearton
  • James W. Corbett
  • Michael Stavola
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 16)

Abstract

In this chapter we will detail the various hydrogen-related defects observed in Si, Ge and m-V semiconductors grown in a H2 ambient or implanted with protons. There are a wide variety of hydrogen-related centers in these materials, most of which appear to be complexes of hydrogen with other impurities or with native defects.

Keywords

Zinc Migration Phosphorus Silane Manifold 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • Stephen J. Pearton
    • 1
  • James W. Corbett
    • 2
  • Michael Stavola
    • 3
  1. 1.AT&T Bell LaboratoriesMurray HillUSA
  2. 2.Physics DepartmentState University of New York at AlbanyAlbanyUSA
  3. 3.Physics DepartmentLehigh UniversityBethlehemUSA

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