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Hydrogen, and Semiconductor Surfaces and Surface Layers

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Hydrogen in Crystalline Semiconductors

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 16))

Abstract

In this chapter we will concentrate on the effects of hydrogen ion bombardment on the near-surface region of semiconductors. A related area is the termination of surface bonds by atomic hydrogen. It is immediately clear from a consideration of the various processing steps involved in fabricating even a simple semiconductor device or circuit that there are many opportunities for atomic hydrogen to interact with the semiconductor.

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Authors and Affiliations

  1. AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ, 07974, USA

    Stephen J. Pearton Ph. D.

  2. Physics Department, State University of New York at Albany, 1400 Washington Avenue, Albany, NY, 12222, USA

    James W. Corbett Ph. D. (Distinguished Service Professor)

  3. Physics Department, Lehigh University, Bethlehem, PA, 18015, USA

    Professor Michael Stavola Ph. D.

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  1. Stephen J. Pearton Ph. D.
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  2. James W. Corbett Ph. D.
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  3. Professor Michael Stavola Ph. D.
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© 1992 Springer-Verlag Berlin Heidelberg

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Pearton, S.J., Corbett, J.W., Stavola, M. (1992). Hydrogen, and Semiconductor Surfaces and Surface Layers. In: Hydrogen in Crystalline Semiconductors. Springer Series in Materials Science, vol 16. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84778-3_7

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  • DOI: https://doi.org/10.1007/978-3-642-84778-3_7

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-55491-2

  • Online ISBN: 978-3-642-84778-3

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