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Hydrogen, and Semiconductor Surfaces and Surface Layers

  • Stephen J. Pearton
  • James W. Corbett
  • Michael Stavola
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 16)

Abstract

In this chapter we will concentrate on the effects of hydrogen ion bombardment on the near-surface region of semiconductors. A related area is the termination of surface bonds by atomic hydrogen. It is immediately clear from a consideration of the various processing steps involved in fabricating even a simple semiconductor device or circuit that there are many opportunities for atomic hydrogen to interact with the semiconductor.

Keywords

Etch Rate Reverse Leakage Current Hydrogen Exposure Proton Implantation Hydrogen Implantation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • Stephen J. Pearton
    • 1
  • James W. Corbett
    • 2
  • Michael Stavola
    • 3
  1. 1.AT&T Bell LaboratoriesMurray HillUSA
  2. 2.Physics DepartmentState University of New York at AlbanyAlbanyUSA
  3. 3.Physics DepartmentLehigh UniversityBethlehemUSA

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