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The Microscopic Characteristics of Impurity-Hydrogen Complexes in III-V Semiconductors

  • Stephen J. Pearton
  • James W. Corbett
  • Michael Stavola
Chapter
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 16)

Abstract

Impurity-hydrogen complexes in III-V hosts are more complicated than in Si due to the presence of two sublattices in the compound materials. There are simply more possible sites for impurities and more configurations that are possible for complex defects. Vibrational spectroscopy is well suited to the determination of the microscopic characteristics of H impurity complexes in the m-V semiconductors [6.1-3] just as it is in Si. Uniaxial stress techniques have also been fruitfully applied. Essentially all of the information on the configuration of H-impurity complexes in the IH-V′s has been derived from infrared-absorption data. At present, there is only one theoretical study of impurity-H complexes [6.4]. In this chapter, recent work on the IR absorption, configurations, and H motions for hydrogen-impurity complexes will be surveyed.

Keywords

Plasma Exposure Infrared Absorption Spectrum Trigonal Symmetry Liquid Encapsulate Czochralski Stress Splitting 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 6.1
    B. Pajot: In Impurities, Defects mid Diffusion in Semiconductors: Bulk and Layered Structures, ed. by D.F. Wolford, J. Bernhole, E.E. Hailer (MRS, Pittsburgh 1990) p.465Google Scholar
  2. 6.2
    J. Chevallier, B. Clerjaud, B. Pajot: In Hydrogen in Semiconductors, ed. by J.I. Pankove, N.M. Johnson (Academic, San Diego 1991) p.447CrossRefGoogle Scholar
  3. 6.3
    B. Pajot: In Shallow Impurities in Semiconductors 1988, ed. by B. Monemar (IOP, Bristol 1989) p.437Google Scholar
  4. 6.4
    P. Briddon, R. Jones: In Shallow Impurities in Semiconductors, ed. by B. Monemar (IOP, Bristol 1989) p.459Google Scholar
  5. 6.5
    B. Pajot, A. Jalil, J. Chevallier, R. Azoulay: Semicond. Sci. Technol. 2, 305 (1987)ADSCrossRefGoogle Scholar
  6. 6.6
    P.S. Nandhra, R.C. Newman, R. Murray, B. Pajot, J. Chevallier, R.B. Beall, J.J. Harris: Semicond. Sci. Technol. 3, 356 (1988)ADSCrossRefGoogle Scholar
  7. 6.7
    B. Pajot, J. Chevallier, A. Jalil, B. Rose: Semicond. Sci. Technol. 4, 91 (1989)ADSCrossRefGoogle Scholar
  8. 6.8
    B. Clerjaud: Physica B 170, 383 (1991)ADSCrossRefGoogle Scholar
  9. 6.9
    J. Chevallier, B. Pajot, A. Jalil, R. Mostefaoui, R. Rahbi, M.C. Boissy: In Defects in Electronic Materials, ed. by M. Stavola, S.J. Pearton, G. Davies (MRS, Pittsburgh 1988) p.337Google Scholar
  10. 6.10
    G. Herzberg: Spectra of Diatomic Molecules, 2nd edn. (Van Nostrand, New York 1950)Google Scholar
  11. 6.11
    S.J. Pearton, W.C. Dautremont-Smith, J. Chevallier, C.W. Tu, K.D. Cummings: J. Appl. Phys. 59, 2821 (1986)ADSCrossRefGoogle Scholar
  12. 6.12
    B. Pajot, R.C. Newman, R. Murray, A. Jalil, J. Chevallier, R. Azoulay: Phys. Rev. 37, 4188 (1988)ADSGoogle Scholar
  13. 6.13
    D.M. Kozuch, M. Stavola, S.J. Pearton, C.R. Abernathy, J. Lopata: In Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures, ed. by D.F. Wolford, J. Bernhole, E.E. Haller (MRS, Pittsburgh 1990) p.477Google Scholar
  14. 6.14
    W.C. Dautremont-Smith, J. Lopata, S.J. Pearton, L.A. Koszi, M. Stavola, V. Swaminathan: J. Appl. Phys. 66, 1993 (1989)ADSCrossRefGoogle Scholar
  15. 6.15
    A. Jalil, J. Chevallier, J.C. Pesant, R. Mostefaoui, B. Pajot, P. Murawala, R. Azoulay: Appl. Phys. Lett. 50, 439 (1987)ADSCrossRefGoogle Scholar
  16. 6.16
    M. Stavola, S.J. Pearton: In Hydrogen in Semiconductors, ed. by J.I. Pankove, N.M. Johnson (Academic, San Diego 1991) p. 139CrossRefGoogle Scholar
  17. 6.17
    K. Bergman, M. Stavola, S.J. Pearton, J. Lopata: Phys. Rev. B 37, 2770 (1988)ADSCrossRefGoogle Scholar
  18. 6.18
    S.K. Estreicher, S.K. Throckmorton, D.S. Marynick: Phys. Rev. B 39, 13241 (1989)ADSCrossRefGoogle Scholar
  19. 6.19
    A. Amore-Bonapasta, A. Lapiccirella, N. Tamassini, M. Capizzi: In Defects in Semiconductors 75, ed. by G. Ferenczi (Trans Tech, Aedermannsdorf 1989) p.1051Google Scholar
  20. 6.20
    P.J.H. Denteneer, C.G. Van de Walle, S.T. Pantelides: Phys. Rev. B 39, 10809 (1989)ADSCrossRefGoogle Scholar
  21. 6.21
    S.B. Zhang, D.J. Chadi: Phys. Rev. B 41, 3885 (1990)ADSCrossRefGoogle Scholar
  22. 6.22
    G.G. DeLeo, W.B. Fowler, T.M. Sudol, K.J. O’Brien: Phys. Rev. B 41, 7581 (1990)ADSCrossRefGoogle Scholar
  23. 6.23
    B. Clerjaud, D. Côte, C. Naud: Phys. Rev. Lett. 58, 1755 (1987)ADSCrossRefGoogle Scholar
  24. 6.24
    B. Clerjaud, D. Côte, M. Krause, C. Naud: In Defects in Electronic Materials, ed. by M. Stavola, S.J. Pearton, G. Davies (MRS, Pittsburgh 1988) p.341Google Scholar
  25. 6.25
    B. Clerjaud, D. Côte, C. Naud: J. Cryst. Growth 83, 190 (1987)ADSCrossRefGoogle Scholar
  26. 6.26
    J. Tatarkiewicz, B. Clerjaud, D. Côte, F. Gendron, A.M. Hennel: Appl. Phys. Lett. 53, 382 (1988)ADSCrossRefGoogle Scholar
  27. 6.27
    B. Clerjaud, private communicationGoogle Scholar
  28. 6.28
    M. Stavola, S.J. Pearton, J. Lopata, C.R. Abernathy, K. Bergman: Phys. Rev. B 39, 8051 (1989)ADSCrossRefGoogle Scholar
  29. 6.29
    A.A. Kaplyanskii: Opt. Spectrosc. (USSR) 16, 329 (1964)ADSGoogle Scholar
  30. 6.30
    K. Bergman, M. Stavola, S.J. Pearton, T. Hayes: Phys. Rev. B 38, 9643 (1988)ADSCrossRefGoogle Scholar
  31. 6.31
    G.G. DeLeo: private communicationGoogle Scholar
  32. 6.32
    D.M. Kozuch, M. Stavola, S.J. Pearton, J. Lopata: unpublishedGoogle Scholar
  33. 6.33
    T. Zundel, A. Mesli, J.C. Muller, P. Siffert: Appl. Phys. A 48, 31 (1989)ADSCrossRefGoogle Scholar
  34. 6.34
    J. Zhu, N.M. Johnson, C. Herring: Phys. Rev. B 41, 354 (1990)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • Stephen J. Pearton
    • 1
  • James W. Corbett
    • 2
  • Michael Stavola
    • 3
  1. 1.AT&T Bell LaboratoriesMurray HillUSA
  2. 2.Physics DepartmentState University of New York at AlbanyAlbanyUSA
  3. 3.Physics DepartmentLehigh UniversityBethlehemUSA

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