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Microscopic Properties of Hydrogen-Related Complexes in Silicon from Vibrational Spectroscopy

  • Stephen J. Pearton
  • James W. Corbett
  • Michael Stavola
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 16)

Abstract

Many of the techniques often used to probe the microscopic properties of defects are ineffective for hydrogen containing complexes because passi-vated impurities are, in most cases, not electrically active or paramagnetic. InfraRed (IR) absorption and Raman spectroscopy, however, have been especially effective for characterizing hydrogen related defects [5.1,2]. The vibration of the light H in complexes occurs at frequencies well above intrinsic lattice absorption. In addition to the hydrogen vibrations, the perturbed local modes of the passivated dopant impurity can sometimes be studied. Once a vibrational fingerprint has been identified for a defect complex, it can be used to study the stability and chemical reactions of the complex. Vibrational spectroscopy is also well suited to the application of uniaxial stress techniques that provide information about defect symmetry and dynamics [5.3]. Further, the vibrational characteristics provide a benchmark for theoretical calculations of the configuration of complexes [5.4].

Keywords

Vibrational Frequency Vibrational Band Uniaxial Stress Isotopic Substitution Trigonal Symmetry 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • Stephen J. Pearton
    • 1
  • James W. Corbett
    • 2
  • Michael Stavola
    • 3
  1. 1.AT&T Bell LaboratoriesMurray HillUSA
  2. 2.Physics DepartmentState University of New York at AlbanyAlbanyUSA
  3. 3.Physics DepartmentLehigh UniversityBethlehemUSA

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