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Shallow Impurity Passivation by Atomic Hydrogen

  • Stephen J. Pearton
  • James W. Corbett
  • Michael Stavola
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 16)

Abstract

The passivation by atomic hydrogen of shallow-level dopants in a variety of semiconductors has now been well established. This phenomenon occurs for both acceptors [4.1,2] and donors in Si, GaAs, GaP and AlGaAs, and has been observed for acceptors in Ge, CdTe, ZnTe and InP. It is likely therefore that this is a general effect, but it may be difficult to observe experimentally in some materials because of the unstable nature of the hydrogen-impurity pairing [4.1,2]. In this chapter we will detail the specific understanding of hydrogen passivation of shallow level impurities in each semiconductor.

Keywords

Reverse Bias Depletion Region Plasma Exposure Carrier Profile Carrier Concentration Profile 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • Stephen J. Pearton
    • 1
  • James W. Corbett
    • 2
  • Michael Stavola
    • 3
  1. 1.AT&T Bell LaboratoriesMurray HillUSA
  2. 2.Physics DepartmentState University of New York at AlbanyAlbanyUSA
  3. 3.Physics DepartmentLehigh UniversityBethlehemUSA

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