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Prevalence of Hydrogen Incorporation and Device Applications

  • Stephen J. Pearton
  • James W. Corbett
  • Michael Stavola
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 16)

Abstract

It is becoming increasingly well recognized that atomic hydrogen can be introduced into Si and other semiconductors during a number of device processing and operation steps [11.1-3]. In many cases hydrogen appears to be injected from water-related species in the native oxide in Si, or from similar species in Al contacts on Si. Seager et al. [11.3] have also noted the possibility of injection from surface hydrocarbons. The incorporation of hydrogen from these sources appears to be most obvious when there is some external driving force, such as bombardment of the surface during deposition of overlayers, or biasing of oxides.

Keywords

Reverse Bias Schottky Diode Metal Organic Chemical Vapor Deposition Perturbed Angular Correlation Specific Contact Resistance 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • Stephen J. Pearton
    • 1
  • James W. Corbett
    • 2
  • Michael Stavola
    • 3
  1. 1.AT&T Bell LaboratoriesMurray HillUSA
  2. 2.Physics DepartmentState University of New York at AlbanyAlbanyUSA
  3. 3.Physics DepartmentLehigh UniversityBethlehemUSA

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