Preparation and Electrical Properties of Plasma Polymer Metal Composite Films
Plasma polymer metal composite films were prepared by simultaneous plasma polymerization and metal evaporation. The metal (Ag, Au, Cu) or semiconductor (Ge, Sn) cluster were encapsulated inside the polymer matrix as microcrystallites or as amorphous material. At metal filling factors lower than the percolation threshold thermal activated tunnelling between the metal particles was found as the dominant conducting mechanism. During annealing processes the electrical conductivity substantially decreases due to changes of the metal particle size and particle shape by coalescence.
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