Abstract
The analytic temperature dependence of the conductivity due to the fluctuation-induced tunnelling was known till now only within the so-called parabolic barrier approximation. It is shown that this dependence is already the general one but the connection with barrier parameters contains now explicitely the influence of the image force. We combine this result with the model assumption that the barriers are built up by less doped regions within the polyacetylene fibrils where the commensurate gap still exists. Then it is possible to obtain barrier parameters from the experimental conductivity data. The results are discussed in connection with recent observations of inhomogeneous dopant distribution.
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© 1992 Springer-Verlag Berlin Heidelberg
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Paasch, G., Zuzok, R., Pukacki, W., Roth, S., Göpel, W. (1992). The General Temperature Dependence of the Fluctuation-Induced Tunnelling Current. Application to Naarmann-Polyacetylene. In: Kuzmany, H., Mehring, M., Roth, S. (eds) Electronic Properties of Polymers. Springer Series in Solid-State Sciences, vol 107. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84705-9_19
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DOI: https://doi.org/10.1007/978-3-642-84705-9_19
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-84707-3
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