Abstract
STM has been made on stepped Si(111) surfaces. On Si(111)-7×7 surfaces prepared by thermal flashing, only [112] directed steps were found to be straight. This can be explained by applying a simple bond model to double Si atoms, which are removed simultaneously in a cluster form from a step edge during sublimation. An edge of the straight step coincided with an unfaulted half edge of the 7×7 unit on the adjacent upper terrace. This indicates the 7×7 formation starts from making dimers accompanied with the unfaulted half just at the step edge. The reversible heatingcurrent-induced step motion was also observed on Si(111) surface, originating from the electromigration effect. On cleaved Si(111) surfaces, a flight of [112] directed steps was found, whose appearance is also explained by the simple bond model for double Si atoms.
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An international conference from the viewpoint of Surface as a New Material was held on July, 1990 at Osaka, Japan, sponsored by The Yamada Science Foundation.
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© 1992 Springer-Verlag Berlin, Heidelberg
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Tokumoto, H., Miki, K. (1992). Scanning Tunneling Microscopy of Stepped Si(111) Surfaces. In: Yoshimori, A., Shinjo, T., Watanabe, H. (eds) Ordering at Surfaces and Interfaces. Springer Series in Materials Science, vol 17. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84482-9_6
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DOI: https://doi.org/10.1007/978-3-642-84482-9_6
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