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Natural Superlattice in Ga0.5In0.5P as a Result of Surface Reconstruction

  • Conference paper
Ordering at Surfaces and Interfaces

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 17))

Abstract

The formation mechanism of the CuPt-type natural superlattice (NSL), observed in Ga0.5In0.5P grown on (001) GaAs by metalorganic vapor phase epitaxy (MOVPE), is discussed, based mainly on GaAs substrate surface orientation effects on the formation. Reconstruction of steps, extending in the [110] direction, and terraces at the phosphorus rich (001) surface plays an essential role in this model. The structure reconstruction with double periodicity in the [\(\bar 1\)10] direction, observed on the flat (001) As-rich GaAs surface, is assumed to exist as a stable structure even in the (001) P-rich Ga0.5In0.5P surface grown by MOVPE, and to persist still in the presence of steps (step-terrace-reconstruction (STR) model). The STR model, together with the assumptions of preferential sticking of one of the cations (probably In atoms) at step-edges due to a steric effect well explains the NSL formation. An effort for justification of these hypotheses is described. The formation mechanism of CuPt type NSL for III-V-V type alloys is also briefly discussed.

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References

  1. T. S. Kuan, T. F. Kuech, W. I. Wang, and E. L. Wilkie, Phys. Rev. Lett. 54 (1985) 201.

    Article  CAS  Google Scholar 

  2. I. J. Murgatroyd, A. G. Norman, G. R. Booker and T. M. Kerr, in: Proc. 11th Intern. Congr. on Electron Microscopy, Kyoto, 1986, Eds. T. Imura, et al. (Japan. Soc. Electron Microscopy, Tokyo,1986).

    Google Scholar 

  3. A. Gomyo, T. Suzuki and S. Iijima, Phys. Rev. Lett. 60 (1988) 2645.

    Google Scholar 

  4. A. Gomyo, T. Suzuki, K. Kobayashi, S. Kawata, I. Hino and T. Yuasa, Appl. Phys. Lett. 50 (1987) 673.

    Article  CAS  Google Scholar 

  5. M. A. Shahid, S. Mahajan and D. E. Laughlin, Phys. Rev. Lett. 58 (1987) 2567.

    Article  CAS  Google Scholar 

  6. Y. E. Ihm, N. Ohtsuka, J. Klem and H. Morkoc, Appl. Phys. Lett. 51 (1987) 3013.

    Article  Google Scholar 

  7. A. Gomyo, K. Kobayashi, S. Kawata, I. Hino, T. Suzuki and T. Yuasa, J. Crystal Growth 77 (1986) 367.

    Article  CAS  Google Scholar 

  8. T. Suzuki, A. Gomyo, S. Iijima, K. Kobayashi, S. Kawata, I. Hino and T. Yuasa, Japan. J. Appl. Phys. 27 (1988) 2098.

    Article  CAS  Google Scholar 

  9. A. Gomyo, T. Suzuki, S. Iijima, H. Htta,H. Fujii, S. Kawata, K. Kobayashi, Y. Ueno and I. Hino, Japan. J. Appl.Phys. 27 (1988) L2370.

    CAS  Google Scholar 

  10. T. Suzuki, A. Gomyo and S. Iijima, J. Crystal Growth 93(1988)396. The NSL formation mechanism presented in this reference has been largely revised in Ref. 26 and further revised in the present paper.

    Google Scholar 

  11. A. Gomyo, S. Kawata, T. Suzuki, S. Iijima and I. Hino, Jpn. J. Appl. Phys 28 (1989) L1728.

    Article  CAS  Google Scholar 

  12. A. Gomyo, H. Hotta, I. IIino, S. Kawata, K. Kobayashi and T. Suzuki, Jpn. J. Appl. Phys. 28 (1989) L1330.

    Article  CAS  Google Scholar 

  13. T. Suzuki, A. Gomyo, and S. Iijima, J. Cryst. Growth, 99 (1990) 60.

    Article  CAS  Google Scholar 

  14. O. Ueda, M. Takikawa, J. Komeno and I. Umebu, Japan. J. Appl. Phy. 26 (1987) L1824.

    Article  CAS  Google Scholar 

  15. P. Bellon, J. P. Chevallier, G. P. Martin, E. Dupont-Nivet, C. Thievaut and J. P. Ahdre, Appl. Phys. Lett. 52 (1988) 567.

    Article  CAS  Google Scholar 

  16. I. J. Murgatroyd, A. G. Norman and G. R. Bokker, J. Appl. Phys. 67 (1990) 2310.

    Article  CAS  Google Scholar 

  17. E. Morita, M. Ikeda, O. Kumagai and K. Kaneko, Appl. Phys. Lett. 53 (1988) 2164.

    CAS  Google Scholar 

  18. S. Yasuami, C. Nozaki and Y. Ohba, Appl. Phys. Lett. 52 (1988) 2031.

    Article  CAS  Google Scholar 

  19. S. Minagawa and M. Kondow, Electron. Lett. 25 (1989)758.

    Google Scholar 

  20. H. Nakayama and H. Fujita, Inst. Phys. Conf. Ser. No. 79, 1986, Adam Hilger, Bristol, p. 289.

    Google Scholar 

  21. T. Kurimoto, and N. Ramada, Phys. Rev. B 40 (1989) 3889

    Article  CAS  Google Scholar 

  22. K. Kobayashi, Y. Ueno, H. Hotta, A. Gomyo, K. Tada, K. Hara, and T. Yuasa, Jpn. J. Appl. Phys. 29 (1990) L1669.

    Article  CAS  Google Scholar 

  23. Y. Ueno, H. Fujii, K. Kobayashi, K. Endo, A. Gomyo, K. Hara, S. Kawata, T. Yuasa, and T. Suzuki, Jpn. J. Appl. Phys. 29 (1990) L1666.

    Article  CAS  Google Scholar 

  24. T. Suzuki, and A. Gomyo, Proceedings of the 6th International Conference on Molecular Beam Epitaxy, J. Cryst. Growth 111 (1991) 353. The STR model was presented at the conference, which was held in August, 1990, at San Diego, USA. The content in this reference has been partly revised in the present paper.

    Google Scholar 

  25. K. Kobayashi, I. Hino, A. Gomyo, S. Kawata and T. Suzuki, IEEE J. Quantum Electron. QE-23 (1987) 704.

    Article  CAS  Google Scholar 

  26. T. Suzuki, I. Hino, K. Kobayashi, A. Gomyo, and S. Kawata, OPTOELECTRONICS-Devices and Technologies 4 (1989) 317.

    CAS  Google Scholar 

  27. T. Fukui and H. Saito, Appl. Phys. Lett. 50 (1987) 824

    Article  CAS  Google Scholar 

  28. H. M. Cox, P. S. Lin, A. Yi-Yan, K. Kash, M. Seto, and Bastos, Appl. Phys. Lett. 55 (1989) 72.

    Google Scholar 

  29. Formation enthalpy (kcal/mole) and lattice constant (-A) values for several binary III-V alloys are cited in this order in the following, for convenience. AIP(39.8, 5.451), GaP(24.4, 5.45), InP(21.2, 5.869), A1As(27.8, 5.661), GaAs(17, 5.653), InAs(14.0, 6.058), A1Sb(20*, 6.136), GaSb(10, 6.096), InSb(7.3, 6.479), where the formation enthalpy value indicated by a mark for AISb is an extrapolated one. Formation enthalpy (exp.), from: J. C. Philips, Bonds and Bands in Semiconductors, Academic Press, New York, 1973, and lattice constant, from: H. C. Casey,-Jr., and M. B. Panish, Heterostructure Lasers (B), Academic Press, New York, 1978.

    Google Scholar 

  30. J. C. Mikkelsen, Jr. and J. B. Boyce, Phys. Rev. Lett. 49 (1982) 1412.

    Article  CAS  Google Scholar 

  31. M. D. Pashley, K. W. Haberern, W. Friday, J. M. Woodall, and P. D. Kirchner, Phys. Rev. Lett. 21 (1988) 2176.

    Article  Google Scholar 

  32. R.I.G. Uhrberg, R.D. Bringans, R.Z. Bachrach, and J.E. Northrup, Phys. Rev. Lett. 56 (1986) 520.

    Article  CAS  Google Scholar 

  33. P. H. Fuoss, D. W. Kisker, G. Renaud, K. L. Tokuda, S. Brennan, and J. L. Kahn, Phys. Rev. Lett. 63 (1989) 2389.

    Article  CAS  Google Scholar 

  34. N. Hamada, and T. Kurimoto, 20th International Conf. on Physics of Semiconductors, Thessaloniki, Greece, August 1990, TuP-129.

    Google Scholar 

  35. O. Ueda, T. Fujii, Y. Nakada, H. Yamada, and I. Umebu, J. Cryst. Growth. 95 (1989) 38.

    Article  CAS  Google Scholar 

  36. T. Suzuki and A. Gomyo, Abstracts for Sixth International Conference on Molecular Beam Epitaxy, San Diego, USA, August 27–31, 1990, XII - 3.

    Google Scholar 

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Author information

Authors and Affiliations

  1. Opto-Electronics Research Laboratories, NEC Corporation, 1-1 Miyazaki 4 chome, Miyamae-ku, Kawasaki-shi 213, Japan

    T. Suzuki & A. Gomyo

  2. Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan

    S. Iijima

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  1. T. Suzuki
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  2. A. Gomyo
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  3. S. Iijima
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Editor information

Editors and Affiliations

  1. Department of Material Physics, Osaka University, Toyonaka, Osaka 560, Japan

    Akio Yoshimori

  2. Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611, Japan

    Teruya Shinjo

  3. Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan

    Hisatsune Watanabe

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© 1992 Springer-Verlag Berlin, Heidelberg

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Suzuki, T., Gomyo, A., Iijima, S. (1992). Natural Superlattice in Ga0.5In0.5P as a Result of Surface Reconstruction. In: Yoshimori, A., Shinjo, T., Watanabe, H. (eds) Ordering at Surfaces and Interfaces. Springer Series in Materials Science, vol 17. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84482-9_41

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  • DOI: https://doi.org/10.1007/978-3-642-84482-9_41

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-84484-3

  • Online ISBN: 978-3-642-84482-9

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