Abstract
The 7×7 superstructure buried at the amorphous Si (a-Si)/Si(111) interface was directly observed by transmission electron microscopy (TEM). High-resolution (HR) images of the 〈110〉 cross-sectional observation showed the atomic arrangement of the projected interface superstructure, which had a periodicity of 7 times the 1/3(224) periodicity along the interface. The atomic structure, which consists of a dimer-stacking fault layer and epitaxial layers extended over the vacant corner sites and the dimer-chains, was revealed by using computer image simulation. Structural modification of the interface 7×7 superstructure during solid phase epitaxial growth (SPE) of the a-Si overlayer was also investigated by TEM. Plan-view transmission electron diffraction observations of samples annealed at various temperatures indicated that a modification of the dimer structure occurred during the transformation from the 7×7 to the 1×1 structure (7×7→l×1). It was found by (110) cross-sectional HRTEM that 7×7→1x1 proceeded laterally within the stacking fault layer prior to the vertical SPE of the a-Si. Furthermore, it was confirmed that the unfaulting of the reversed stacking region, as well as the faulting of the normal stacking region, occurred simultaneously during 7×7→1×1. The mechanism of 7×7→1×1 through the dimer modification was also discussed.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
G. Binnig, H. Rohrer, Ch. Gerber, and E.Weibel, Phys.Rev.Lett. 50, 120 (1983).
R.J. Hamers, R.M. Tromp, and J.E. Demuth, Surf.Sci. 181, 346 (1987).
R.E. Schlier and H.E. Farnsworth, J.Chem.Phys. 30, 917 (1959).
K. Aldmoto, J. Mizuki, T. Tatsumi, N. Aizaki, and J. Matsui, Surf.Sci. 183, L297 (1987).
J.M. Gibson, M. McDonald, and F.C. Unterwald, Phys.Rev.Lett. 55, 1765 (1985).
J.M. Gibson, H. J. Gossmann, J.C. Bean, R.T. Tung, and L.C. Feldman, Phys. Rev. Lett. 56, 355 (1986).
A. Sakai, T. Tatsumi, T. Niino, H. Hirayama, and K. Ishida, Appl.Phys.Lett. 55, 2500 (1989).
K. Takayanagi, Y. Tanishiro, M. Takahashi, and S. Takahashi, J. Vac.Sci.Technol. A3, 1502 (1985).
I.K. Robinson, W.K. Waskiewicz, R.T. Tung, and J. Bohr, Phys.Rev.Lett. 57, 2714 (1986).
A. Sakai, T. Tatsumi, and K. Ishida, Surf.Sci. 224, L956 (1989).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1992 Springer-Verlag Berlin, Heidelberg
About this paper
Cite this paper
Sakai, A., Tatsumi, T., Ishida, K. (1992). 7×7 Superstructure at the Amorphous Si/Si(111) Interface and Its Modification During Solid Phase Epitaxial Growth. In: Yoshimori, A., Shinjo, T., Watanabe, H. (eds) Ordering at Surfaces and Interfaces. Springer Series in Materials Science, vol 17. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84482-9_39
Download citation
DOI: https://doi.org/10.1007/978-3-642-84482-9_39
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-84484-3
Online ISBN: 978-3-642-84482-9
eBook Packages: Springer Book Archive