Abstract
The interfacial superstructures of metal(Al or Sb)/ GaAs(001) contacts are observed by using the grazing incident x-ray diffraction (GID) method. The Schottky-barrier heights for these contacts are also determined by using the current-voltage(I-V) or capacitance-voltage(C-V) methods. The Schottky-barrier heights for Al/GaAs contacts with and without an interfacial superstructure are almost the same. On the other hand, the Schottky-barrier heights of the Sb/GaAs contacts are found to differ by as much as 0.1 eV according to the difference in interfacial superstructure. This indicates the importance of the local electronic structure for Schottky-barrier formation at the metal/GaAs interfaces. The present results are discussed in connection with the current Schottky-barrier models.
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© 1992 Springer-Verlag Berlin, Heidelberg
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Hirose, K., Akimoto, K., Hirosawa, I., Mizuki, J., Mizutani, T., Matsui, J. (1992). Interfacial Superstructure and Schottky-Barrier Height of Metal/GaAs Contacts. In: Yoshimori, A., Shinjo, T., Watanabe, H. (eds) Ordering at Surfaces and Interfaces. Springer Series in Materials Science, vol 17. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84482-9_38
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DOI: https://doi.org/10.1007/978-3-642-84482-9_38
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-84484-3
Online ISBN: 978-3-642-84482-9
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