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Structure at the Yb/GaAs Interface Studied by Anomalous X-Ray Scattering

  • K. Akimoto
  • K. Hirose
  • J. Mizuki
  • I. Hirosawa
  • T. Mizutani
  • J. Matsui
Conference paper
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 17)

Abstract

Two kinds of 4×1 superstructures are found for Yb/GaAs(001) contacts with different Yb thicknesses. Different Schottky-barrier height values are also found for these samples. To clarify the role of Yb atoms in the 4×1 structure, an X-ray anomalous dispersion effect has been used in the grazing-incidence X-ray diffraction geometry. Diffraction intensities measured in the X-ray energy range near the Yb L III absorption edge show a characteristic variation, which reflects the energy dependence of the real part of the anomalous scattering factor (f ’ ) for Yb atoms. As a result, for all the samples, Yb atoms are found to order in 4×1 structures. By comparison of the calculated diffraction intensities with observed intensities, two (4×1) structural models are found for the thin and thick Yb-layer samples, respectively.

Keywords

Diffraction Intensity National Synchrotron Light Source Calculated Structure Factor Observe Structure Factor Anomalous Scattering Factor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1992

Authors and Affiliations

  • K. Akimoto
    • 1
  • K. Hirose
    • 1
  • J. Mizuki
    • 1
  • I. Hirosawa
    • 1
  • T. Mizutani
    • 1
  • J. Matsui
    • 1
  1. 1.Fundamental Research LaboratoriesNEC CorporationTsukuba, Ibaraki 305Japan

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