Scanning Tunneling Microscopy of a Metastable c(4×4) Structure Formed on a Si(100) Surface

  • T. Mizutani
  • T. Ide
Conference paper
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 17)

Abstract

A metastable c(4×4) structure is formed on a silicon (100) surface by hydrogen exposure of 2×10−5 Ton at 700°C for 30 minutes. Atomic images acquired simultaneously at negative and positive biases using an ultrahigh vacuum scanning tunneling microscope (UHV-STM) are inconsistent with the c(4×4) structural models previously proposed. The authors propose a new structural model, where the unit cell has a single topmost dimer.

Keywords

Carbide Boron Hydrocarbon Tungsten Hydride 

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1992

Authors and Affiliations

  • T. Mizutani
    • 1
  • T. Ide
    • 1
  1. 1.Fundamental Research LaboratoriesNEC CorporationTsukuba, Ibaraki 305Japan

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