Scanning Tunneling Microscopy of a Metastable c(4×4) Structure Formed on a Si(100) Surface

  • T. Mizutani
  • T. Ide
Conference paper
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 17)


A metastable c(4×4) structure is formed on a silicon (100) surface by hydrogen exposure of 2×10−5 Ton at 700°C for 30 minutes. Atomic images acquired simultaneously at negative and positive biases using an ultrahigh vacuum scanning tunneling microscope (UHV-STM) are inconsistent with the c(4×4) structural models previously proposed. The authors propose a new structural model, where the unit cell has a single topmost dimer.


Carbide Boron Hydrocarbon Tungsten Hydride 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. [1]
    J. J. Lander and J. Morrison, J. Chem. Phys. 37 (1962) 729.CrossRefGoogle Scholar
  2. [2]
    T. D. Poppendieck, T. C. Ngoc and M. B. Webb, Surf. Sci. 75 (1978) 287.CrossRefGoogle Scholar
  3. [3]
    M. J. Cardillo and G. E. Becker, Phys. Lev. Lett. 40 (1978) 1148.Google Scholar
  4. [4]
    M. J. Cardillo and G. E. Becker, Phys. Rev. B 21 (1980) 1497.Google Scholar
  5. [5]
    T. Tabata, T. Aruga and Y. Murata, Surf. Sci. 179 (1987) L63.CrossRefGoogle Scholar
  6. [6]
    H. W. Wang, R. Lin and X. Wang, Phys. Rev. B 36 (1987) 7712.CrossRefGoogle Scholar
  7. [7]
    K. Kato, T. Ide, T. Nishimori and T. Ichinokawa, Surf. Sci. 207 (1988) 177.CrossRefGoogle Scholar
  8. [8]
    E. G. McRae, R. A. Malic, and D. A. Kapilow, Rev. Sci. Instrum. 56 (1985) 2077.Google Scholar
  9. [9]
    K. Kato, T. Ide, S. Miura and T. Ichinokawa, Surf. Sci. 194 (1988) L87.CrossRefGoogle Scholar
  10. [10]
    L. Barbier and J. Lapujoulade, J. Vac. Sci. Technol. A8 (1990) 2662.Google Scholar
  11. [11]
    R. J. Hamers, R. M. Tromp, and J. E. Demuth, Phys. Rev. B34 (1986) 5343.CrossRefGoogle Scholar
  12. [12]
    H. Niehus, U. K. Köhler, M. Copel and J. E. Demuth, J. Microscopy 152 (1988) 735.CrossRefGoogle Scholar
  13. [13]
    K. C. Pandey, in:Proc. 17th Intern. Conf. on the Phys. of Semiconductors, Eds. D. J. Chadi and W. A. Harrison ( Springer, New York, 1984 ) p. 55.Google Scholar
  14. [14]
    T. Sakurai, T. Hashizume, I. Kamiya, Y. Hasegawa, T. Ide, M.Miyao, I. Sumita, A. Sakai, and S. Hyodo, J. Vac. Sci. Technol. A7 (1989) 1684.Google Scholar
  15. [15]
    J. E. Demuth, R. J. Hamers, R. M. Tromp and M. E. Welland, IBM J. Res. Develop. 30 (1986) 396.CrossRefGoogle Scholar
  16. [16]
    B. S. Swartzentruber, Y. -W. Mo, M. B. Webb and M. G. Lagally, J. Vac. Sci. Technol. A7 (1989) 2901.Google Scholar
  17. [17]
    J. A. Stroscio, R. M. Feenstra and A. P. Fein, Phys. Rev. Lett. 57 (1986) 2579.Google Scholar
  18. [18]
    S. Ohnishi, private communicationGoogle Scholar
  19. [19]
    T. Sakurai and H. D. Hangstrum, Phys. Rev. B 14 (1976) 1593.Google Scholar
  20. [20]
    P. Bedrossian, R. D. Meade, K. Mortensen, D. M. Chen, J. A. Golovchenko, and D. Vanderbilt, Phys. Rev. Lett. 63 (1989) 1257.Google Scholar

Copyright information

© Springer-Verlag Berlin, Heidelberg 1992

Authors and Affiliations

  • T. Mizutani
    • 1
  • T. Ide
    • 1
  1. 1.Fundamental Research LaboratoriesNEC CorporationTsukuba, Ibaraki 305Japan

Personalised recommendations