Abstract
Two cases of core level photoemission are considered that have close relationships with surface reconstruction. On GaAs(110), the intensity ratio of d 5/2- and d 3/2-resonances is discussed with emphasis on the difference from that in optical absorption. On Si(100), the effect of final state screening is shown to lead to a possibility of interpreting the observed data of 2p core emission in terms of the buckled dimer model.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
G. J. Lapeyre and J. Anderson: Phys. Rev. Letters 35 117 (1975).
K. Cho and Y. Miyamoto: Surf. Sci. 192 L835 (1987).
Y. Onodera and Y. Toyozawa: J. Phys. Soc. Japan 22 833 (1967).
Y. Takeda: Master Thesis (Osaka University, 1989).
Y. Takeda, Y. Miyamoto, and K. Cho: in preparation.
T. Tabata, T. Aruga, and Y. Murata: Surf. Sci. 179 L63 (1986).
D. H. Rich, T. Miller, and T.-C. Chiang: Phys. Rev. B37, 3124 (1988).
T. Yamazaki: Master Thesis (Osaka University, 1990).
T. Yamazaki and K. Cho: Surface as a New Material (Proc. 26th Yamada Conf., Osaka, 1990) to be published in Surf. Sci.
R. Ditchfield, W. J. Hehre, and J. A. Pople: J. Chem. Phys. 54 724 (1971).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1992 Springer-Verlag Berlin, Heidelberg
About this paper
Cite this paper
Cho, K. (1992). Aspects of Core-Level Photoemission from Semiconductor Surfaces: Resonant Emission and Final State Interaction. In: Yoshimori, A., Shinjo, T., Watanabe, H. (eds) Ordering at Surfaces and Interfaces. Springer Series in Materials Science, vol 17. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84482-9_14
Download citation
DOI: https://doi.org/10.1007/978-3-642-84482-9_14
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-84484-3
Online ISBN: 978-3-642-84482-9
eBook Packages: Springer Book Archive