Surface Dynamics on Si(001) Studied with a High Temperature Scanning Tunneling Microscope

Dijkkamp, D.; van Loenen, E. J.; Elswijk, H. B.

doi:10.1007/978-3-642-84482-9_10

D. Dijkkamp¹⁰,
E. J. van Loenen¹⁰ &
H. B. Elswijk¹⁰

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 17))

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Abstract

We have recently developed a new, thermally stable STM, which allows the observation of surfaces at elevated temperatures, up to at least 800 K. With this instrument, we have observed the evolution of growth induced mosaic step patterns into the equilibrium step distribution at 750 K in real time. We deduce a value of 2.0 eV for the kink detachment energy. In addition, we have for the first time directly observed the migration of atom-like species on the Si(001) surface. At temperatures around 350 K, diffusion takes place exclusively along the dimer rows.

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Authors and Affiliations

Philips Research Laboratories, P.O. Box 80000, 5600 JA, Eindhoven, The Netherlands
D. Dijkkamp, E. J. van Loenen & H. B. Elswijk

Authors

D. Dijkkamp
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E. J. van Loenen
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H. B. Elswijk
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Editors and Affiliations

Department of Material Physics, Osaka University, Toyonaka, Osaka 560, Japan
Akio Yoshimori
Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611, Japan
Teruya Shinjo
Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
Hisatsune Watanabe

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Dijkkamp, D., van Loenen, E.J., Elswijk, H.B. (1992). Surface Dynamics on Si(001) Studied with a High Temperature Scanning Tunneling Microscope. In: Yoshimori, A., Shinjo, T., Watanabe, H. (eds) Ordering at Surfaces and Interfaces. Springer Series in Materials Science, vol 17. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84482-9_10

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DOI: https://doi.org/10.1007/978-3-642-84482-9_10
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-84484-3
Online ISBN: 978-3-642-84482-9
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