Impurity Emission from GaAs/GaAlAs Heterostructures in the FIR

  • M. Witzany
  • E. Gornik
  • W. Ettmiiller
  • G. Böhm
  • G. Weimann
  • W. Knap
  • J. L. Robert
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 101)

Abstract

We determined the binding energies of impurities in GaAs-AlGaAs heterostructures by means of a magnetically tunable GaAs detector at magnetic fields of up to 10T. We found strong oscillations with filling factor of the total impurity emission intensity. At the maxima we could analyze the spectra because screening is less effective.

Keywords

GaAs 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • M. Witzany
    • 1
  • E. Gornik
    • 1
  • W. Ettmiiller
    • 1
  • G. Böhm
    • 1
  • G. Weimann
    • 1
  • W. Knap
    • 2
  • J. L. Robert
    • 2
  1. 1.Walter Schottky InstitutTU MünchenGarchingGermany
  2. 2.Université des Sciences et Techniques du LanguedocMontpellierFrance

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