Impurity Emission from GaAs/GaAlAs Heterostructures in the FIR
We determined the binding energies of impurities in GaAs-AlGaAs heterostructures by means of a magnetically tunable GaAs detector at magnetic fields of up to 10T. We found strong oscillations with filling factor of the total impurity emission intensity. At the maxima we could analyze the spectra because screening is less effective.
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