Influence of Localization on the Hall Effect in Narrow-Gap, Bulk Semiconductors
Part of the
Springer Series in Solid-State Sciences
book series (SSSOL, volume 101)
Our transport study of the narrow gap, bulk (3D) semiconductors Hg1−xCdxTe and InSb reveals incipient, non-quantized “Hall plateaus” which coincide with the minima of Shubnikov-de Haas oscillations, analogous to the quantum Hall effect in 2-dimensional systems. We attribute this effect to the existence of quasi-mobility gaps at the bottom of each Landau level, originating from localization due to shallow hydrogenic donors and disorder.
KeywordsHall Effect Landau Level Quantum Hall Effect Hall Plateau Landau Band
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see refs. 1–6 in R. G. Mani, Phys. Rev. B 41, 7922 (1990).CrossRefGoogle Scholar
see The Quantum Hall Effect, ed. R. Prange and S. Girvin, (Springer-Verlag, New York, 1987).Google Scholar
J. B. Choi, Ph.D Thesis, Univ. of Maryland, 1989 (unpublished).Google Scholar
W. S. Boyle and A. Brailsford, Phys. Rev. 107, 903 (1957).CrossRefGoogle Scholar
For InSb (Hg0.8
0.7meV (0.3meV).Google Scholar
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