Influence of Localization on the Hall Effect in Narrow-Gap, Bulk Semiconductors
Our transport study of the narrow gap, bulk (3D) semiconductors Hg1−xCdxTe and InSb reveals incipient, non-quantized “Hall plateaus” which coincide with the minima of Shubnikov-de Haas oscillations, analogous to the quantum Hall effect in 2-dimensional systems. We attribute this effect to the existence of quasi-mobility gaps at the bottom of each Landau level, originating from localization due to shallow hydrogenic donors and disorder.
KeywordsAssure Lost Haas
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