Influence of Localization on the Hall Effect in Narrow-Gap, Bulk Semiconductors

  • R. G. Mani
  • J. R. Anderson
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 101)

Abstract

Our transport study of the narrow gap, bulk (3D) semiconductors Hg1−xCdxTe and InSb reveals incipient, non-quantized “Hall plateaus” which coincide with the minima of Shubnikov-de Haas oscillations, analogous to the quantum Hall effect in 2-dimensional systems. We attribute this effect to the existence of quasi-mobility gaps at the bottom of each Landau level, originating from localization due to shallow hydrogenic donors and disorder.

Keywords

Assure Lost Haas 

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References

  1. 1).
    see refs. 1–6 in R. G. Mani, Phys. Rev. B 41, 7922 (1990).CrossRefGoogle Scholar
  2. 2).
    see The Quantum Hall Effect, ed. R. Prange and S. Girvin, (Springer-Verlag, New York, 1987).Google Scholar
  3. 3).
    J. B. Choi, Ph.D Thesis, Univ. of Maryland, 1989 (unpublished).Google Scholar
  4. 4).
    W. S. Boyle and A. Brailsford, Phys. Rev. 107, 903 (1957).CrossRefGoogle Scholar
  5. 5).
    For InSb (Hg0.8Cd0.2Te), R* 0.7meV (0.3meV).Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • R. G. Mani
    • 1
  • J. R. Anderson
    • 1
  1. 1.Department of PhysicsUniversity of MarylandCollege ParkUSA

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