Magnetoresistance and Hall Effect Measurements on Molecular-Beam Epitaxy-Grown ZnSe-on-GaAs Epilayers in High Magnetic Fields
Magnetoresistance and Hall effect measurements were performed on MBE-grown ZnSe-on-GaAs-epilayers with donor concentrations on the insulating side of the metal-insulator transition in high magnetic fields and temperatures from 1.8 K to 300 K. In the hopping regime, a temperature and concentration dependent negative magnetoresistance effect is observed. The results are compared to the Yosida-Toyozawa localised-spin model and analysed using a semiempirical formula first introduced by Khosla and Fischer.
KeywordsGaAs Posite ZnSe A310
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