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Magnetoresistance and Hall Effect Measurements on Molecular-Beam Epitaxy-Grown ZnSe-on-GaAs Epilayers in High Magnetic Fields

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Abstract

Magnetoresistance and Hall effect measurements were performed on MBE-grown ZnSe-on-GaAs-epilayers with donor concentrations on the insulating side of the metal-insulator transition in high magnetic fields and temperatures from 1.8 K to 300 K. In the hopping regime, a temperature and concentration dependent negative magnetoresistance effect is observed. The results are compared to the Yosida-Toyozawa localised-spin model and analysed using a semiempirical formula first introduced by Khosla and Fischer.

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References

  1. B.R. Sethi, P.C. Mathur, J. Appl. Phys. 49, 3618 (1978).

    Article  CAS  Google Scholar 

  2. P.C. Mathur, B.R. Sethi, O.P. Sharma, J. Appl. Phys. 50, 4463 (1979).

    Article  CAS  Google Scholar 

  3. D.D. Neodeoglo, phys. stat. sol. (b) 80, 369 (1977).

    Article  Google Scholar 

  4. G.N. Ivanova, D.D. Neodeoglo, A.V. Simashkevich, I.N. Timchenko, phys. stat. sol. (b) 103, 643 (1981).

    Article  CAS  Google Scholar 

  5. T. Marshall, J. Gaines, Appl. Phys. Lett. 56, 2669 (1990).

    Article  CAS  Google Scholar 

  6. V.A. Kasiyan, D.D. Neodeoglo, A.V. Simashkevich, I.N. Timchenko, phys. stat. sol. (b) 139, 559 (1987).

    Article  Google Scholar 

  7. R.P. Khosla, J.R. Fischer, Phys. Rev. B 2, 4084 (1970).

    Article  Google Scholar 

  8. K. Yosida, Phys. Rev. 107, 396 (1957).

    Article  Google Scholar 

  9. Y. Toyozawa, J. Phys. Soc. Japan 17, 986 (1962).

    Article  Google Scholar 

  10. E.H. Sondheimer, A.H. Wilson, Proc. Roy. soc. A310, 435 (1947).

    Google Scholar 

  11. J.A. Appelbaum, Phys. Rev 154, 633 (1967).

    Article  CAS  Google Scholar 

  12. E.H. Putley, The Hall Effect in Semiconductor Physics, Dover, NY 1968.

    Google Scholar 

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© 1992 Springer-Verlag Berlin Heidelberg

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Kempf, P., von Ortenberg, M., Marshall, T., Games, J. (1992). Magnetoresistance and Hall Effect Measurements on Molecular-Beam Epitaxy-Grown ZnSe-on-GaAs Epilayers in High Magnetic Fields. In: Landwehr, G. (eds) High Magnetic Fields in Semiconductor Physics III. Springer Series in Solid-State Sciences, vol 101. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84408-9_62

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  • DOI: https://doi.org/10.1007/978-3-642-84408-9_62

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-84410-2

  • Online ISBN: 978-3-642-84408-9

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