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Magnetoresistance and Hall Effect Measurements on Molecular-Beam Epitaxy-Grown ZnSe-on-GaAs Epilayers in High Magnetic Fields

  • P. Kempf
  • M. von Ortenberg
  • T. Marshall
  • J. Games
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 101)

Abstract

Magnetoresistance and Hall effect measurements were performed on MBE-grown ZnSe-on-GaAs-epilayers with donor concentrations on the insulating side of the metal-insulator transition in high magnetic fields and temperatures from 1.8 K to 300 K. In the hopping regime, a temperature and concentration dependent negative magnetoresistance effect is observed. The results are compared to the Yosida-Toyozawa localised-spin model and analysed using a semiempirical formula first introduced by Khosla and Fischer.

Keywords

High Magnetic Field Donor Concentration Hall Coefficient Impurity Band Hall Effect Measurement 
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References

  1. [1]
    B.R. Sethi, P.C. Mathur, J. Appl. Phys. 49, 3618 (1978).CrossRefGoogle Scholar
  2. [2]
    P.C. Mathur, B.R. Sethi, O.P. Sharma, J. Appl. Phys. 50, 4463 (1979).CrossRefGoogle Scholar
  3. [3]
    D.D. Neodeoglo, phys. stat. sol. (b) 80, 369 (1977).CrossRefGoogle Scholar
  4. [4]
    G.N. Ivanova, D.D. Neodeoglo, A.V. Simashkevich, I.N. Timchenko, phys. stat. sol. (b) 103, 643 (1981).CrossRefGoogle Scholar
  5. [5]
    T. Marshall, J. Gaines, Appl. Phys. Lett. 56, 2669 (1990).CrossRefGoogle Scholar
  6. [6]
    V.A. Kasiyan, D.D. Neodeoglo, A.V. Simashkevich, I.N. Timchenko, phys. stat. sol. (b) 139, 559 (1987).CrossRefGoogle Scholar
  7. [7]
    R.P. Khosla, J.R. Fischer, Phys. Rev. B 2, 4084 (1970).CrossRefGoogle Scholar
  8. [8]
    K. Yosida, Phys. Rev. 107, 396 (1957).CrossRefGoogle Scholar
  9. [9]
    Y. Toyozawa, J. Phys. Soc. Japan 17, 986 (1962).CrossRefGoogle Scholar
  10. [10]
    E.H. Sondheimer, A.H. Wilson, Proc. Roy. soc. A310, 435 (1947).Google Scholar
  11. [11]
    J.A. Appelbaum, Phys. Rev 154, 633 (1967).CrossRefGoogle Scholar
  12. [12]
    E.H. Putley, The Hall Effect in Semiconductor Physics, Dover, NY 1968.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • P. Kempf
    • 1
  • M. von Ortenberg
    • 1
  • T. Marshall
    • 1
  • J. Games
    • 1
  1. 1.Institut für Halbleiterphysik und OptikHochmagnetfeldanlage der Technischen Universität BraunschweigBraunschweigGermany

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