Magnetoresistance and Hall Effect Measurements on Molecular-Beam Epitaxy-Grown ZnSe-on-GaAs Epilayers in High Magnetic Fields

  • P. Kempf
  • M. von Ortenberg
  • T. Marshall
  • J. Games
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 101)

Abstract

Magnetoresistance and Hall effect measurements were performed on MBE-grown ZnSe-on-GaAs-epilayers with donor concentrations on the insulating side of the metal-insulator transition in high magnetic fields and temperatures from 1.8 K to 300 K. In the hopping regime, a temperature and concentration dependent negative magnetoresistance effect is observed. The results are compared to the Yosida-Toyozawa localised-spin model and analysed using a semiempirical formula first introduced by Khosla and Fischer.

Keywords

GaAs Posite ZnSe A310 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • P. Kempf
    • 1
  • M. von Ortenberg
    • 1
  • T. Marshall
    • 1
  • J. Games
    • 1
  1. 1.Institut für Halbleiterphysik und OptikHochmagnetfeldanlage der Technischen Universität BraunschweigBraunschweigGermany

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