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Magneto-Capacitance in Two-Dimensional Electronic Systems in AlxGa1−xAs/GaAs Heterostructures Under the Influence of Ionized Impurities

  • J. Richter
  • H. Sigg
  • K. von Klitzing
  • K. Ploog
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 101)

Abstract

We have studied the magneto-capacitance of impurity-influenced two-dimensional electronic gases(2DEG’s) at the interface of AlGaAs/GaAs-heteTostTuctmes. The 2D-carrier density as evaluated from the Shubnikov de Haas-type oscillations indicates an impurity-specific filling of the lowest spin-split Landau level. We interpret this behavior with the bound states of impurities, which have to be taken into account when considering the degeneracy of the 2DEG in the magnetic quantum limit.

Keywords

Magnetic Field Filling Factor Gate Voltage Constant Magnetic Field Doping Type 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • J. Richter
    • 1
  • H. Sigg
    • 1
    • 2
  • K. von Klitzing
    • 1
  • K. Ploog
    • 1
  1. 1.Max-Planck-Institut für FestkörperforschungStuttgart 80Germany
  2. 2.Paul Scherrer Institut ZürichZürichSwitzerland

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