Magneto-Capacitance in Two-Dimensional Electronic Systems in AlxGa1−xAs/GaAs Heterostructures Under the Influence of Ionized Impurities
We have studied the magneto-capacitance of impurity-influenced two-dimensional electronic gases(2DEG’s) at the interface of AlGaAs/GaAs-heteTostTuctmes. The 2D-carrier density as evaluated from the Shubnikov de Haas-type oscillations indicates an impurity-specific filling of the lowest spin-split Landau level. We interpret this behavior with the bound states of impurities, which have to be taken into account when considering the degeneracy of the 2DEG in the magnetic quantum limit.
KeywordsMagnetic Field Filling Factor Gate Voltage Constant Magnetic Field Doping Type
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