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Effect of Nondissipative Edge Currents on the Magnetoresistance of a Two-Dimensional Electron Gas at High Magnetic Fields

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Book cover High Magnetic Fields in Semiconductor Physics III

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 101))

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Abstract

It is experimentally shown that the magnetoresistance Rxx (v) at noninteger filling factors v in Si MOSFETs and GaAs/AlGaAs heterostructures with large aspect ratio is equal to the difference of the Hall resistances: δRxy =h/e2 v 1 −Rxy (v), where v 1 is an integer corresponding to the nearest well developed quantum Hall state. Our model of nondissipative current flow near the sample edges, which dominates at low temperature and low currents, explains our results and predicts the Hall resistance difference to be an upper limit for Rxx independent of the sample size.

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Author information

Authors and Affiliations

  1. Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, W-7000, Stuttgart 80, Germany

    S. I. Dorozhkin, S. Koch & K. von Klitzing

  2. Institute of Solid State Physics, Academy of Sciences of the USSR, Chernogolovka, Moscow District, SU-142432, Moscow, USSR

    S. I. Dorozhkin

  3. Siemens Forschungslaboratorien, W-8000, München, Germany

    G. Dorda

Authors
  1. S. I. Dorozhkin
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  2. S. Koch
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  3. K. von Klitzing
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  4. G. Dorda
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Editor information

Editors and Affiliations

  1. Physikalisches Institut, Universität Würzburg, Am Hubland, W-8700, Würzburg, Fed. Rep. of Germany

    Gottfried Landwehr

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© 1992 Springer-Verlag Berlin Heidelberg

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Dorozhkin, S.I., Koch, S., von Klitzing, K., Dorda, G. (1992). Effect of Nondissipative Edge Currents on the Magnetoresistance of a Two-Dimensional Electron Gas at High Magnetic Fields. In: Landwehr, G. (eds) High Magnetic Fields in Semiconductor Physics III. Springer Series in Solid-State Sciences, vol 101. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84408-9_18

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  • DOI: https://doi.org/10.1007/978-3-642-84408-9_18

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-84410-2

  • Online ISBN: 978-3-642-84408-9

  • eBook Packages: Springer Book Archive

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