Abstract
Theoretical calculations of electronic subbands in two-dimensional semiconductor systems have been performed in Si metal-oxide-semiconductor (MOS) structures [9.1] and later in III–V heterostructures. In the latter case, the tight-binding method [9.2–4], the pseudopotential method [9.5,6] or ab initio schemes based on the density functional formalism [9.7] were exploited, in addition to the envelope- function or effective-mass method.
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Altarelli, M. (1991). Electronic States in Semiconductor Superlattices and Quantum Wells: An Overview. In: Chelikowsky, J.R., Franciosi, A. (eds) Electronic Materials. Springer Series in Solid-State Sciences, vol 95. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84359-4_9
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