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Formation and Properties of Metal—Semiconductor Interfaces

  • John H. Weaver
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 95)

Abstract

The properties of interfaces formed by the deposition of metal atoms onto semiconductor surfaces have been studied extensively. The development of experimental techniques that allow investigations with high spatial and energy resolution has advanced the understanding of surface bonding, chemical reactions, intermixing, and Schottky barrier formation [8.1–26]. At the same time, our understanding of the processes and the mechanisms that give rise to the various atom profiles is still far from complete. Moreover, there is no consensus about the physical mechanisms responsible for the development of the Schottky barrier.

Keywords

Schottky Barrier Core Level Conduction Band Minimum Attenuation Curve Fermi Level Position 
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© Springer-Verlag Berlin Heidelberg 1991

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  • John H. Weaver

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