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Determination of the Electronic Structure of Solids

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Electronic Materials

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 95))

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Abstract

Materials science is undergoing a transformation from an art to a science. While many novel classes of materials [4.1] have been developed without a systematic search, we are presently at a stage where the perfection of materials plays a crucial role. For example, the optical absorption by impurities in fiber optics materials has been reduced to a level that makes fiber optics a viable technology for information transfer. Likewise, the high purity and crystalline perfection of semiconductor materials like Si and GaAs is crucial for the functioning of electronic devices. An important factor is also the quality of interfaces between different device materials. Here, the perfection does not match that of bulk materials yet. The relatively low density of charged interface defects at the SiCVSi interface (typically 1010 defects/cm2 or 10-5 monolayer) is one of the main reasons for today’s dominance of silicon technology. When it comes to systematically improving materials, it is of prime interest to know the electronic structure in great detail. Examples are III-V compounds, where the band structure allows for higher mobilities, ergo faster speed, than in Si. The character of the band gap (direct vs indirect), the effective masses (curvatures of the valence and conduction bands), and the spacing of higher-lying indirect band minima (which limit the mobility at high velocities by intervalley scattering) all play a role in the electrical properties of devices. III-V and II-VI materials with optimal properties can be engineered by producing ternary (and higher order) compounds, such as GaInAs, GaA1As, and HgCdTe.

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Authors
  1. Franz J. Himpsel
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Editors and Affiliations

  1. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, 55455, USA

    James R. Chelikowsky  & Alfonso Franciosi  & 

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© 1991 Springer-Verlag Berlin Heidelberg

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Himpsel, F.J. (1991). Determination of the Electronic Structure of Solids. In: Chelikowsky, J.R., Franciosi, A. (eds) Electronic Materials. Springer Series in Solid-State Sciences, vol 95. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84359-4_4

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  • DOI: https://doi.org/10.1007/978-3-642-84359-4_4

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-84361-7

  • Online ISBN: 978-3-642-84359-4

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