Skip to main content
SpringerLink
Log in

Ion and Laser Beam Processing of Semiconductors: Phase Transitions in Silicon

  • Chapter
Electronic Materials

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 95))

  • 254 Accesses

Abstract

The use of energetic ion and laser beams to analyze and modify surfaces has had a profound impact on the development of many areas of materials science. This scientific field is very large in scope and here we will concentrate on the best understood and most technologically important subject: Si processing science and technology. The emphasis will be on what new properties have been discovered or what new phenomena have been explored using ion or laser beams. Although the physics of the beam/solid interactions are different for ions or lasers, there is a commonality between the two subjects. These techniques have led to a better understanding of many phenomena, from energy transfer to defect reactions. The biggest impact however, on materials science has probably been in the areas of phase transitions and crystal growth and these are the areas we will discuss. The beam techniques have resulted in new findings in the three commonly recognized condensed phases of Si: crystalline (c), amorphous (a) and liquid (1).

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 39.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. R.S. Ohl: Bell Syst. Tech. J. 31, 104 (1952)

    Google Scholar 

  2. W. Shockley: U.S. Patent 2, 787, 564

    Google Scholar 

  3. J.M. Poate, J.M.Mayer: Laser Annealing of Semiconductors (Academic, New York 1982)

    Google Scholar 

  4. J.W. Mayer, L. Eriksson, JA. Davies: Ion Implantation in Semiconductors (Academic, New York 1970)

    Google Scholar 

  5. R.G. Wilson, G.R. Brewer: Ion Beams with Applications to Ion Implantation (Wiley, New York 1973)

    Google Scholar 

  6. G. Dearnaley, J.H. Freeman, R.S. Nelson, J. Stephens: Ion Implantation (North-Holland, Amsterdam 1973)

    Google Scholar 

  7. B. Smith: Ion Implantation Range Data for Si and Ge Device Technologies (Research Studies Press, Forest Grove, OR 1977)

    Google Scholar 

  8. J. Lindhard, M.E. Scharff, H.E. Schiott: K. Dan. Vidensk. Selsk., Mat. Fys. Medd. 13, No. 14 (1963)

    Google Scholar 

  9. W.C. Hofker: Philips Res. Rep. Suppl., No. 8 (1975)

    Google Scholar 

  10. J. Fletcher, J. Narayan, O.N. Holland: In Microcospy of Semiconducting Materials 1981, Inst, of Phys. Conf. Ser., Vol. 60, ed. by A.G. Cullis, D.C. Joy (Inst, of Phys., Bristol 1981) p. 295

    Google Scholar 

  11. G.L. Olson, J.A. Roth: Mater. Sci. Rep. 3, 1 (1988)

    Article  CAS  Google Scholar 

  12. T.E. Scidel: In VLSI Technology, ed. by S.M. Sze (Wiley, New York 1983) Chap. 6

    Google Scholar 

  13. J.M. Poate, J. Linnros, F. Priolo, D.C. Jacobson, J.L. Batstone, M.O. Thompson: Phys. Rev. Lett. 60, 1322 (1988)

    Article  CAS  Google Scholar 

  14. K.A. Jackson: J. Mater. Res. 3, 1218 (1988)

    Article  CAS  Google Scholar 

  15. B. Chalmers: Principles of Solidification (Wiley, New York 1964)

    Google Scholar 

  16. J.S. Williams: In Surface Modification and Alloying, ed. by J.M. Poate, G. Foti, D.C. Jacobson (Plenum, New York 1983) Chap. 5

    Google Scholar 

  17. J.M. Poate, D.C. Jacobson, J.S. Williams, R.G. Elliman, D.O. Boerma: Nucl. Instrum. Methods B19/20, 480 (1987)

    Google Scholar 

  18. M. Reinelt, S. Kalbitzer: J. de Phys. Colloq. C4, 843 (1981)

    Google Scholar 

  19. S. Kalbitzer, M. Reinelt, W. Stolz: In Proc. of the 4th EC Photovoltaic Solar Energy Conference, Stesa, May 1982, ed. by WH. Bloss, G. Grassi (Reidel, Dordrecht, Holland 1982) p. 163

    Google Scholar 

  20. R.B. Fair: In Impurity Doping Processes in Silicon, ed. by F.F.Y. Wang (North-Holland, New York 1981) Chap. 7

    Google Scholar 

  21. S. Coffa, L. Calcagno, S.U. Campisano, G. Calleri, G. Ferla: J. Appl. Phys. 64, 6291 (1988)

    Article  CAS  Google Scholar 

  22. D.C. Jacobson, J.M. Poate, G.L. Olson: Appl. Phys. Lett. 48, 118 (1986)

    Article  CAS  Google Scholar 

  23. F. Priolo, J.M. Poate, D.C. Jacobson, J. Linnros, J.L. Batstone, S.U. Campisano: Appl. Phys. Lett. 52, 1213 (1988); Nucl. Instrum. Methods B 39, 343 (1989)

    Article  CAS  Google Scholar 

  24. B.G. Bagley, H.S. Chen: AIP Conf. Proc. 50, 97 (1979)

    Article  CAS  Google Scholar 

  25. F. Spaepen, D. Turnbull: AIP Conf. Proc. 50, 73 (1979)

    Article  CAS  Google Scholar 

  26. E.P. Donovan, F. Spaepen, D. Turnbull, J.M. Poate, D.C. Jacobson: J. Appl. Phys. 57, 1795 (1985)

    Article  CAS  Google Scholar 

  27. P. Baeri, G. Foti, J.M. Poate, S.U. Campisano, A.G. Cullis: Appl. Phys. Lett. 38, 800 (1981)

    Article  CAS  Google Scholar 

  28. F. Priolo, J.M. Poate, D.C. Jacobson, J.L. Batstone, J.S. Custer, M.O. Thompson: Appl. Phys. Lett. 53, 2486 (1988)

    Article  CAS  Google Scholar 

  29. J.M. Poate: In Laser and Electron-Beam Interactions with Solids, Mater. Res. Soc. Proc., Vol.4, ed. by B.R. Appleton, G.K. Celler (North-Holland, New York 1982) p. 121

    Google Scholar 

  30. S.U. Campisano, D.C. Jacobson, J.M. Poate, A.G. Cullis, N.G. Chew: Appl. Phys. Lett. 46, 846 (1985)

    Article  CAS  Google Scholar 

  31. D.H. Auston, CM. Surko, T.N.C. Venkatesan, R.E. Slusher, J.A. Golovchenko: Appl. Phys. Lett. 33, 437 (1978)

    Article  CAS  Google Scholar 

  32. GJ. Galvin, M.O. Thompson, J.W. Mayer, R.B. Hammond, N. Paulter, P.S. Peercy: Phys. Rev. Lett. 48, 33 (1982)

    Article  CAS  Google Scholar 

  33. P.S. Peercy, M.O. Thompson: In Energy Beam-Solid Interactions and Transient Thermal Processing, Mater. Res. Soc. Proc., Vol. 35, ed. by D.K. Biegelsen, G. Rozgonyi, C. Shank (Materials Research Socienty, Pittsburgh, PA 1985) p. 53

    Google Scholar 

  34. M.O. Thompson, G.J. Galvin, J.W. Mayer, P.S. Peercy, J.M. Poate, D.C. Jacobson, A.G. Cullis, N.G.Chew: Phys. Rev. Lett. 52, 2360 (1984)

    Article  CAS  Google Scholar 

  35. P.L. Liu, R. Yen, N. Bloembergen, R.T. Hodgson: Appl. Phys. Lett. 34, 864 (1979)

    Article  CAS  Google Scholar 

  36. R. Tsu, R.T. Hodgson, T.Y. Tan, J.E.E. Baglin: Phys. Rev. Lett. 42, 1358 (1979)

    Article  Google Scholar 

  37. M.O. Thompson, J.W. Mayer, A.G. Cullis, H.C. Webber, N.G. Chew, J.M. Poate, D.C. Jacobson: Phys. Rev. Lett. 50, 896 (1983)

    Article  CAS  Google Scholar 

  38. G. Gore: Philips. Mag. 9, 73 (1855)

    Google Scholar 

  39. S. Roorda, S. Doom, W.C. Sinke, P.M.L.O. Scholte, E. van Loenen: Phys. Rev. Lett. 62, 1880 (1989)

    Article  CAS  Google Scholar 

  40. EJP. Donovan, F. Spaepan, J.M. Poate, D.C. Jacobson: Appl. Phys. Lett. 55, 1516 (1989)

    Article  CAS  Google Scholar 

  41. S. Roorda, J.M. Poate, D.C. Jacobson, D.J. Eaglesham, B.S. Dennis, S. Dierker, W.C. Sinke, F. Spaepen: Solid State Commun. 75, 197 (1990)

    Article  CAS  Google Scholar 

  42. S. Roorda, J.M. Poate, D.C. Jacobson, B.S. Dennis, S. Dierker, W.C. Sinke: Appl. Phys. Lett. 56, 2097 (1990)

    Article  CAS  Google Scholar 

  43. A. Polman, D.C. Jacobson, S. Coffa, J.M. Poate, S. Roorda, W.C. Sinke: Appl. Phys. Lett. 57, 1230 (1990)

    Article  CAS  Google Scholar 

  44. S. Coffa, J.M. Poate, D.C. Jacobson, A. Polman: Appl. Phys. Lett., in press

    Google Scholar 

  45. S. Coffa, J.M. Poate, D.C. Jacobson, W. Frank: To be published

    Google Scholar 

Download references

Authors
  1. John M. Poate
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, 55455, USA

    James R. Chelikowsky  & Alfonso Franciosi  & 

Rights and permissions

Reprints and permissions

Copyright information

© 1991 Springer-Verlag Berlin Heidelberg

About this chapter

Cite this chapter

Poate, J.M. (1991). Ion and Laser Beam Processing of Semiconductors: Phase Transitions in Silicon. In: Chelikowsky, J.R., Franciosi, A. (eds) Electronic Materials. Springer Series in Solid-State Sciences, vol 95. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84359-4_12

Download citation

  • DOI: https://doi.org/10.1007/978-3-642-84359-4_12

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-84361-7

  • Online ISBN: 978-3-642-84359-4

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation