Abstract
Because of the simple quasi-two-dimensional structure [1] and small overlap of the valence- and conduction band states in highly oriented pyrolytic graphite (HOPG) the relaxation dynamics of nonequilibrium electronic carriers should differ distinctly from that already observed in semiconductors. Due to its short absorption depth (30 nm) hot carrier populations with a density above 1021cm−3 can be easily generated with amplified fs-pulses at λ = 625 nm. We report for the first time femtosecond details of the relaxation process of extremely dense carrier gases in HOPG at room temperature over a wide range of optical excitation densities.
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References
B.T. Kelly, Physics of graphite (London, Applied Science Publisher, Ltd. 1981 )
K. Seibert, G.C. Cho, W. Kütt, H. Kurz, D.H. Reitze, M.C. Downer, and A.M. Malvezzi, to be published in Phys. Rev. B15
J. Heremans, C.M. Olk, G.L. Eesley, J. Steinbeck and G. Dresselhaus, Phys. Rev. Letters 60, 452, (1988)
A.M. Malvezzi, G. Reverberi, and N. Bloembergen, Mat. res. Doc. Symp. Proc. 100, 453, (1988)
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© 1990 Springer-Verlag Berlin, Heidelberg
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Seibert, K. et al. (1990). Ultrafast Relaxation Processes of Hot Carriers in Graphite. In: Harris, C.B., Ippen, E.P., Mourou, G.A., Zewail, A.H. (eds) Ultrafast Phenomena VII. Springer Series in Chemical Physics, vol 53. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84269-6_92
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DOI: https://doi.org/10.1007/978-3-642-84269-6_92
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-84271-9
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