Ultrafast Relaxation Processes of Hot Carriers in Graphite

  • K. Seibert
  • G. C. Cho
  • W. Kütt
  • H. Kurz
  • D. H. Reitze
  • M. C. Downer
  • A. M. Malvezzi
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 53)

Abstract

Because of the simple quasi-two-dimensional structure [1] and small overlap of the valence- and conduction band states in highly oriented pyrolytic graphite (HOPG) the relaxation dynamics of nonequilibrium electronic carriers should differ distinctly from that already observed in semiconductors. Due to its short absorption depth (30 nm) hot carrier populations with a density above 1021cm−3 can be easily generated with amplified fs-pulses at λ = 625 nm. We report for the first time femtosecond details of the relaxation process of extremely dense carrier gases in HOPG at room temperature over a wide range of optical excitation densities.

Keywords

Graphite Kelly 

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References

  1. [1]
    B.T. Kelly, Physics of graphite (London, Applied Science Publisher, Ltd. 1981 )Google Scholar
  2. [2]
    K. Seibert, G.C. Cho, W. Kütt, H. Kurz, D.H. Reitze, M.C. Downer, and A.M. Malvezzi, to be published in Phys. Rev. B15 Google Scholar
  3. [3]
    J. Heremans, C.M. Olk, G.L. Eesley, J. Steinbeck and G. Dresselhaus, Phys. Rev. Letters 60, 452, (1988)CrossRefADSGoogle Scholar
  4. A.M. Malvezzi, G. Reverberi, and N. Bloembergen, Mat. res. Doc. Symp. Proc. 100, 453, (1988)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin, Heidelberg 1990

Authors and Affiliations

  • K. Seibert
    • 1
  • G. C. Cho
    • 1
  • W. Kütt
  • H. Kurz
  • D. H. Reitze
    • 2
  • M. C. Downer
    • 2
  • A. M. Malvezzi
    • 3
  1. 1.Institute of Semiconductor ElectronicsRWTH AachenAachenFed. Rep. of Germany
  2. 2.Physics DepartmentUniversity of Texas at AustinAustinUSA
  3. 3.Department of ElectronicsUniversity of PaviaPaviaItaly

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