Skip to main content
SpringerLink
Log in

Ultrafast Relaxation Processes of Hot Carriers in Graphite

  • Conference paper
Book cover Ultrafast Phenomena VII

Part of the book series: Springer Series in Chemical Physics ((CHEMICAL,volume 53))

  • 245 Accesses

Abstract

Because of the simple quasi-two-dimensional structure [1] and small overlap of the valence- and conduction band states in highly oriented pyrolytic graphite (HOPG) the relaxation dynamics of nonequilibrium electronic carriers should differ distinctly from that already observed in semiconductors. Due to its short absorption depth (30 nm) hot carrier populations with a density above 1021cm−3 can be easily generated with amplified fs-pulses at λ = 625 nm. We report for the first time femtosecond details of the relaxation process of extremely dense carrier gases in HOPG at room temperature over a wide range of optical excitation densities.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 129.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 169.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

References

  1. B.T. Kelly, Physics of graphite (London, Applied Science Publisher, Ltd. 1981 )

    Google Scholar 

  2. K. Seibert, G.C. Cho, W. Kütt, H. Kurz, D.H. Reitze, M.C. Downer, and A.M. Malvezzi, to be published in Phys. Rev. B15

    Google Scholar 

  3. J. Heremans, C.M. Olk, G.L. Eesley, J. Steinbeck and G. Dresselhaus, Phys. Rev. Letters 60, 452, (1988)

    Article  ADS  Google Scholar 

  4. A.M. Malvezzi, G. Reverberi, and N. Bloembergen, Mat. res. Doc. Symp. Proc. 100, 453, (1988)

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Semiconductor Electronics, RWTH Aachen, Sommerfeldstrasse, D-5100, Aachen, Fed. Rep. of Germany

    K. Seibert & G. C. Cho

  2. Physics Department, University of Texas at Austin, Austin, TX, 78712, USA

    D. H. Reitze & M. C. Downer

  3. Department of Electronics, University of Pavia, I-27100, Pavia, Italy

    A. M. Malvezzi

Authors
  1. K. Seibert
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. G. C. Cho
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. W. Kütt
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. H. Kurz
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. D. H. Reitze
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. M. C. Downer
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. A. M. Malvezzi
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Department of Chemistry, University of California, 94720, Berkeley, CA, USA

    Charles B. Harris Ph.D.

  2. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 02139, Cambridge, MA, USA

    Erich P. Ippen Ph.D.

  3. Electrical Engineering and Computer Science Department, University of Michigan, 48109, Ann Arbor, MI, USA

    Gerard A. Mourou Ph.D.

  4. Department of Chemistry, California Institute of Technology, 91125, Pasadena, CA, USA

    Ahmed H. Zewail Ph.D.

Rights and permissions

Reprints and permissions

Copyright information

© 1990 Springer-Verlag Berlin, Heidelberg

About this paper

Cite this paper

Seibert, K. et al. (1990). Ultrafast Relaxation Processes of Hot Carriers in Graphite. In: Harris, C.B., Ippen, E.P., Mourou, G.A., Zewail, A.H. (eds) Ultrafast Phenomena VII. Springer Series in Chemical Physics, vol 53. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84269-6_92

Download citation

  • DOI: https://doi.org/10.1007/978-3-642-84269-6_92

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-84271-9

  • Online ISBN: 978-3-642-84269-6

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation