Ultrafast Recombination in Ion-Damaged InP Studied by Femtosecond Luminescence
Time—resolved photoluminescence in H+ bombarded InP reveals decay times down to 415 fs due to ultrafast recombination processes which are in the same order of magnitude as the intraband relaxation processes. As a consequence extreme nonequilibrium carrier distributions are observed in the luminescene spectra.
KeywordsLuminescence Spectrum Carrier Lifetime Damage Dose Photoluminescence Experiment Undamaged Sample
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