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Ultrafast Recombination in Ion-Damaged InP Studied by Femtosecond Luminescence

  • K. F. Lamprecht
  • R. A. Höpfel
  • L. Palmetshofer
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 53)

Abstract

Time—resolved photoluminescence in H+ bombarded InP reveals decay times down to 415 fs due to ultrafast recombination processes which are in the same order of magnitude as the intraband relaxation processes. As a consequence extreme nonequilibrium carrier distributions are observed in the luminescene spectra.

Keywords

Luminescence Spectrum Carrier Lifetime Damage Dose Photoluminescence Experiment Undamaged Sample 
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Copyright information

© Springer-Verlag Berlin, Heidelberg 1990

Authors and Affiliations

  • K. F. Lamprecht
    • 1
  • R. A. Höpfel
    • 1
  • L. Palmetshofer
    • 2
  1. 1.Institute of Experimental PhysicsUniversity of InnsbruckInnsbruckAustria
  2. 2.Institute of Experimental PhysicsUniversity of LinzLinzAustria

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